Doping of p‐type ZnSb: Single parabolic band model and impurity band conduction

Böttger, P. H. Michael; Pomrehn, Gregory; Snyder, G. Jeffrey; Finstad, T. G.

doi:10.1002/pssa.201127211

Cited by 75 publications

(81 citation statements)

References 36 publications

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“…It was also observed for ZnSb by Justi et al in the 1960s [14]. Recently, several others have reported on impurity bands in ZnSb [53,79,83].…”

Section: Impurity Band Conductionsupporting

confidence: 63%

“…It is common and qualitatively well-understood for other semiconductors that this inefficiency involves segregation (solid solubility limit), clustering of dopant atoms and/or agglomeration of complexes of dopant atoms and point defects. were obtained in materials with a content of (0.06-3) at.% Sn [53,68]. The hole concentration variations with Sn doping concentrations where apparently opposite for these two studies.…”

Section: Doping Effectsmentioning

confidence: 77%

“…Guo and Luo have reported that the Goldsmid formula returned a value of E g =0.3eV for their polycrystalline ZnSb samples [23]. However, Böttger et al justified that for the samples that have a band gap of 0.3eV obtained by Goldsmid formula, the temperature-dependent resistivity was fitted better with a value of 0.44eV [53]. It is fair to state that it depends upon the context whether it is best to reconsider the band gap value for polycrystalline or reconsider the idealizations used in the measurement methods.…”

Section: Experimental Band Gapmentioning

confidence: 98%

“…The model has been successful for finding the optimum doping concentration of many thermoelectric materials [55][56][57]. When applied to Seebeck measurements on ZnSb with different doping concentrations, it has been observed that Pisarenko plot (the Seebeck coefficient vs. the charge carrier concentration) does not follow the SPB model with a single density of states effective mass m � , which was determined to be (0.42-0.49)×m 0 , where m 0 is free electron mass [15,53], but rather a different mass fit for different ranges of doping concentrations. A previous study by Böttger et al has suggested that deviations from idealized SPB behaviour could be induced by impurity band states [53].…”

Section: Effective Mass and Density Of Statesmentioning

confidence: 99%

“…Böttger et al determined each mass tensor component from band diagram calculations [53]. Different components were given by…”

Section: Effective Mass and Density Of Statesmentioning

confidence: 99%

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Review of Research on the Thermoelectric Material ZnSb

Song¹,

Finstad²

2016

Thermoelectrics for Power Generation - A Look at Trends in the Technology

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The thermoelectric material ZnSb has been studied intensively in recent years and has shown promising features. The other zinc-antimonide compound, Zn 4 Sb 3 has remarkable low thermal conductivity, but it is accompanied with phase transitions at moderate temperature and has inherent stability problems. Compared to that, ZnSb is relatively phase stable and has a relative high charge carrier mobility and Seebeck coefficient, thus yielding a decent power factor. Meanwhile, its thermal conductivity can be reduced by means of nanostructuring, thus giving a good figure of merit at moderate temperatures, 400-600K. Many researchers have dedicated their efforts to study and improve ZnSb properties, and the figure of merit has been reported to be above one. Still, ZnSb as a thermoelectric material has features and behaviours that are not well-understood. The behaviour and properties of its intrinsic defects are not understood, but have interested researchers in recent years. This chapter intends to offer a comprehensive review on ZnSb to the readers. By combining own experiences from research on thermoelectric materials, the authors address the prospect for improving the thermoelectric properties of ZnSb and the concerns of transferring lab results to manufacturing.

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“…It was also observed for ZnSb by Justi et al in the 1960s [14]. Recently, several others have reported on impurity bands in ZnSb [53,79,83].…”

Section: Impurity Band Conductionsupporting

confidence: 63%

Section: Doping Effectsmentioning

confidence: 77%

Section: Experimental Band Gapmentioning

confidence: 98%

Section: Effective Mass and Density Of Statesmentioning

confidence: 99%

“…Böttger et al determined each mass tensor component from band diagram calculations [53]. Different components were given by…”

Section: Effective Mass and Density Of Statesmentioning

confidence: 99%

See 3 more Smart Citations

Review of Research on the Thermoelectric Material ZnSb

Song¹,

Finstad²

2016

Thermoelectrics for Power Generation - A Look at Trends in the Technology

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Effective Mass from Seebeck Coefficient

Snyder

Pereyra

Gurunathan

2022

Adv Funct Materials

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Engineering semiconductor devices requires an understanding of the effective mass of electrons and holes. Effective masses have historically been determined in metals at cryogenic temperatures estimated using measurements of the electronic specific heat. Instead, by combining measurements of the Seebeck and Hall effects, a density of states effective mass can be determined in doped semiconductors at room temperature and above. Here, a simple method to calculate the electron effective mass using the Seebeck coefficient and an estimate of the free electron or hole concentration, such as that determined from the Hall effect, is introduced mS∗me=0.924(300KT)(nH1020cm−3)2/3[3(exp[|S|kB/e−2]−0.17)2/31+exp[−5(|S|kB/e−kB/e|S|)]+|S|kB/e1+exp[5(|S|kB/e−kB/e|S|)]] here mnormalS∗ is the Seebeck effective mass, nH is the charge carrier concentration measured by the Hall effect (nH = 1/eRH, RH is Hall resistance) in 1020 cm−3, T is the absolute temperature in K, S is the Seebeck coefficient, and kB/e = 86.3 μV K−1. This estimate of the effective mass can aid the understanding and engineering of the electronic structure as it is largely independent of scattering and the effects of microstructure (grain boundary resistance). It is particularly helpful in characterizing thermoelectric materials.

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Tunable Electrical Conductivity and Simultaneously Enhanced Thermoelectric and Mechanical Properties in n‐type Bi₂Te₃

et al. 2022

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The recent growing energy crisis draws considerable attention to high-performance thermoelectric materials. n-type bismuth telluride is still irreplaceable at near room temperature for commercial application, and therefore, is worthy of further investigation. In this work, nanostructured Bi 2 Te 3 polycrystalline materials with highly enhanced thermoelectric properties are obtained by alkali metal Na solid solution. Na is chosen as the cation site dopant for n-type polycrystalline Bi 2 Te 3 . Na enters the Bi site, introducing holes in the Bi 2 Te 3 matrix and rendering the electrical conductivity tunable from 300 to 1800 Scm -1 . The solid solution limit of Na in Bi 2 Te 3 exceeds 0.3 wt%. Owing to the effective solid solution, the Fermi level of Bi 2 Te 3 is properly regulated, leading to an improved Seebeck coefficient. In addition, the scattering of both charge carriers and phonons is modulated, which ensured a high-power factor and low lattice thermal conductivity. Benefitting from the synergistic optimization of both electrical and thermal transport properties, a maximum figure of merit (ZT) of 1.03 is achieved at 303 K when the doping content is 0.25 wt%, which is 70% higher than that of the pristine sample. This work disclosed an effective strategy for enhancing the performance of n-type bismuth telluride-based alloy materials.

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Doping of p‐type ZnSb: Single parabolic band model and impurity band conduction

Cited by 75 publications

References 36 publications

Review of Research on the Thermoelectric Material ZnSb

Review of Research on the Thermoelectric Material ZnSb

Effective Mass from Seebeck Coefficient

Tunable Electrical Conductivity and Simultaneously Enhanced Thermoelectric and Mechanical Properties in n‐type Bi₂Te₃

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Doping of p‐type ZnSb: Single parabolic band model and impurity band conduction

Cited by 75 publications

References 36 publications

Review of Research on the Thermoelectric Material ZnSb

Review of Research on the Thermoelectric Material ZnSb

Effective Mass from Seebeck Coefficient

Tunable Electrical Conductivity and Simultaneously Enhanced Thermoelectric and Mechanical Properties in n‐type Bi2Te3

Contact Info

Product

Resources

About

Tunable Electrical Conductivity and Simultaneously Enhanced Thermoelectric and Mechanical Properties in n‐type Bi₂Te₃