Doping of SnO2 with H atoms: An alternative way to attain <i>n</i>-type conductivity

Villamagua, Luis; Stashans, Arvids; Carini, Manuela; Maldonado, Frank

doi:10.1063/1.4968832

Cited by 14 publications

(11 citation statements)

References 18 publications

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“…Meanwhile, the SH-SnO 2 film showed two-fold higher hydrogen intensity than that of the SO-SnO 2 film due to hydrogen incorporation from H-containing species in H 2 O plasma. Notably, hydrogen impurity concentrations in various oxides influence the crystalline structure and electrical properties, like carrier mobility and concentrations [32][33][34]. For example, Husein et al reported that hydrogen-doped indium oxide films showed decreased electron mobility as the hydrogen content was increased to 5.7% [33].…”

Section: Resultsmentioning

confidence: 99%

Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

et al. 2020

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Herein, we performed a comparative study of plasma-enhanced atomic layer deposition (PEALD) of SnO2 films using Sn(dmamp)2 as the Sn source and either H2O plasma or O2 plasma as the oxygen source in a wide temperature range of 100–300 °C. Since the type of oxygen source employed in PEALD determines the growth behavior and resultant film properties, we investigated the growth feature of both SnO2 PEALD processes and the various chemical, structural, morphological, optical, and electrical properties of SnO2 films, depending on the oxygen source. SnO2 films from Sn(dmamp)2/H2O plasma (SH-SnO2) and Sn(dmamp)2/O2 plasma (SO-SnO2) showed self-limiting atomic layer deposition (ALD) growth behavior with growth rates of ~0.21 and 0.07–0.13 nm/cycle, respectively. SO-SnO2 films showed relatively larger grain structures than SH-SnO2 films at all temperatures. Interestingly, SH-SnO2 films grown at high temperatures of 250 and 300 °C presented porous rod-shaped surface morphology. SO-SnO2 films showed good electrical properties, such as high mobility up to 27 cm2 V−1·s−1 and high carrier concentration of ~1019 cm−3, whereas SH-SnO2 films exhibited poor Hall mobility of 0.3–1.4 cm2 V−1·s−1 and moderate carrier concentration of 1 × 1017–30 × 1017 cm−3. This may be attributed to the significant grain boundary and hydrogen impurity scattering.

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Section: Resultsmentioning

confidence: 99%

Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

et al. 2020

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“…Due to better synthetic control than that with fluorine doping, p‐type doping with Group III atoms (In, Ga, and Al) or n‐type doping with Group V atoms (Sb doping), which creates shallow levels, was thoroughly explored in recent years. In addition to increasing conductivity, transition‐metal doping is reported to decrease large volume changes upon lithiation/delithiation .…”

Section: Doped Sno2 Lib Anodesmentioning

confidence: 99%

Tin Oxide Based Nanomaterials and Their Application as Anodes in Lithium‐Ion Batteries and Beyond

et al. 2019

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Herein, recent progress in the field of tin oxide (SnO2)‐based nanosized and nanostructured materials as conversion and alloying/dealloying‐type anodes in lithium‐ion batteries and beyond (sodium‐ and potassium‐ion batteries) is briefly discussed. The first section addresses the importance of the initial SnO2 micro‐ and nanostructure on the conversion and alloying/dealloying reaction upon lithiation and its impact on the microstructure and cyclability of the anodes. A further section is dedicated to recent advances in the fabrication of diverse 0D to 3D nanostructures to overcome stability issues induced by large volume changes during cycling. Additionally, the role of doping on conductivity and synergistic effects of redox‐active and ‐inactive dopants on the reversible lithium‐storage capacity and rate capability are discussed. Furthermore, the synthesis and electrochemical properties of nanostructured SnO2/C composites are reviewed. The broad research spectrum of SnO2 anode materials is finally reflected in a brief overview of recent work published on Na‐ and K‐ion batteries.

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“…Considering that oxygen vacancies are easily detectable by elemental quantifications, and at the same time, hydrogen itself is an element difficult to characterize, it explains why oxygen vacancies have been attributed to the n-type behavior in some semiconductors. The study by Villamagua et al demonstrated numerically that SnO 2 with hydrogen incorporation, with and without oxygen vacancies, exhibits the same magnitude of the free-carrier density, leading to a conclusion that oxygen vacancies do not contribute to the n-type behavior.…”

Section: Resultsmentioning

confidence: 99%

Unintentional Hydrogen Incorporation into the SnO₂ Electron Transport Layer by ALD and Its Effect on the Electronic Band Structure

Martínez-Puente

Tirado

Jaramillo

et al. 2021

ACS Appl. Energy Mater.

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This work reports the influence of atomic layer deposition (ALD) using its variants as thermal ALD, remote plasma ALD (RPALD), and direct plasma ALD on the physical parameters of the as-deposited SnO x films. The deposition process and chemical composition are related to their electronic band structure such as valence band maximum, conduction band minimum, band gap, and work function. Oxidant agents such as H 2 O, O 2 , and O 3 were evaluated with deposition temperatures of 80 and 200 °C. Each of the SnO x films were integrated into a solar cell prototype as an electron transport layer, yielding the maximum photovoltaic efficiency of 15.15% for the cell using the SnO x film obtained with oxygen-assisted RPALD at 80 °C. Tin oxides deposited at 200 °C using ozone and oxygen, respectively, feature surface plasmon resonance (SPR) under near-infrared irradiation (0.5 eV), which was detected by reflection electron energy loss and X-ray photoelectron spectroscopies. The unintentionally incorporated substitutional hydrogen acting as a shallow donor is responsible for the SPR effect, defect states in the band gap, and considerably reducing photovoltaic efficiency of the solar cells studied. This doping can be detected by in situ quadrupole mass spectroscopy characterization in the absence of CH 2 among reaction byproducts at the ALD oxidation step.

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Doping of SnO2 with H atoms: An alternative way to attain n-type conductivity

Cited by 14 publications

References 18 publications

Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

Tin Oxide Based Nanomaterials and Their Application as Anodes in Lithium‐Ion Batteries and Beyond

Unintentional Hydrogen Incorporation into the SnO₂ Electron Transport Layer by ALD and Its Effect on the Electronic Band Structure

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Doping of SnO2 with H atoms: An alternative way to attain n-type conductivity

Cited by 14 publications

References 18 publications

Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

Tin Oxide Based Nanomaterials and Their Application as Anodes in Lithium‐Ion Batteries and Beyond

Unintentional Hydrogen Incorporation into the SnO2 Electron Transport Layer by ALD and Its Effect on the Electronic Band Structure

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Product

Resources

About

Unintentional Hydrogen Incorporation into the SnO₂ Electron Transport Layer by ALD and Its Effect on the Electronic Band Structure