Doping optimization of solar grade (SOG) silicon ingots for increasing ingot yield and cell efficiency

In the frame of permanent objective to increase solar cell efficiency and to decrease production cost the monolike ingot process was designed which combine multicrystalline (mc) productivity and monocrystalline structure performances. As a raw material the mc-Solar Grade silicon (SoG-Si) was used because it is less expensive than the Si purified by gas chemical route (Siemens process or equivalent), Usage of the mc-SoG-Si for growing silicon ingots by monolike process should contribute to the ingot and wafer manufacturing cost decrease. SoG silicon using would be developed all the more fast since it enables to produce high efficiency solar cells. It is why the monolike process have been tested and optimized for Kazakhstan mc-SoG silicon. The objective of this work was study of the higher level content impurities influences on the crystal defect generation (mainly dislocations) of the monocrystalline structure. Visual monocrystalline structure, minority carrier lifetime mapping, and photoluminescence techniques were used to study the monolike ingots obtained from Kazakhstan’s mc-SoG silicon.

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Doping optimization of solar grade (SOG) silicon ingots for increasing ingot yield and cell efficiency

Cited by 3 publications

References 10 publications

Resistivity profiles in multicrystalline silicon ingots featuring gallium co-doping

Resistivity profiles in multicrystalline silicon ingots featuring gallium co-doping

Impact of Dopants Incomplete Ionization on Resistivity Profiles in Triple-Doped Multicrystalline Silicon

Monolike ingot growth by directional solidification of Solar Grade silicon

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