Doping profile effects on modulation-doped single nonabrupt GaAs/AlxGa1−xAs quantum wells

Wang, H.; Farias, G. A.; Freire, V. N.

doi:10.1006/spmi.1998.0653

Cited by 3 publications

(1 citation statement)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Nevertheless, considering smooth potential barriers would not affect the qualitative behavior of the results to be presented here, since the effect of such smooth interfaces has been demonstrated to be mainly a shift on the eigenenergies of the system. 20,21 The (x, y)-plane is discretized in a ∆x = ∆y = 0.4 nm grid, and the finite differences technique is used to perform the derivatives coming from the kinetic energy terms of the Hamiltonian. Imaginary potentials 22 are placed on the edges of the input and output channels, in order to absorb the propagated wave packet and avoid spurious reflection at the boundaries of the computational box.…”

Section: Theoretical Modelmentioning

confidence: 99%

Braess paradox at the mesoscopic scale

et al. 2013

View full text Add to dashboard Cite

We theoretically demonstrate that the transport inefficiency recently found experimentally for branched-out mesoscopic networks can also be observed in a quantum ring of finite width with an attached central horizontal branch. This is done by investigating the time evolution of an electron wave packet in such a system. Our numerical results show that the conductivity of the ring does not necessary improves if one adds an extra channel. This ensures that there exists a quantum analogue of the Braess Paradox, originating from quantum scattering and interference.

show abstract

Section: Theoretical Modelmentioning

confidence: 99%

Braess paradox at the mesoscopic scale

et al. 2013

View full text Add to dashboard Cite

show abstract

Effect of non-abrupt doping profiles on the carrier sheet density in one-side modulation-doped GaAs/AlGaAs quantum wells

Lima

Enders

Fonseca

et al. 2004

phys. stat. sol. (c)

View full text Add to dashboard Cite

A theoretical study on the influence of non-abrupt doping profiles on the electronic subband structure in one-side modulation-doped GaAs/AlGaAs quantum wells with graded interfaces is presented. Emphasis is given on the dependence of the carriers sheet density on both the spacer thickness and the donors diffusion length. A proper discretization method for solving the coupled Schrödinger and Poisson equations self-consistently over a nonuniform grid is proposed. This furnishes numerically stable results for the electron sheet density even when non-abrupt doping and heterointerface profiles are included in the model calculation. The depletion approximation is surpassed and a significant increase in the electron sheet density is obtained when non-abrupt doping profiles are taken into account.

show abstract