Doping profiles in low resistive GaN tunnel junctions grown by metalorganic vapor phase epitaxy

Akatsuka, Yasuto; Iwayama, Sho; Takeuchi, Tetsuya; Kamiyama, Satoshi; Iwaya, Motoaki; Akasaki, Isamu

doi:10.7567/1882-0786/aafca8

Cited by 32 publications

(22 citation statements)

References 29 publications

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“…Few reports were found on the details of the effects of the etch-then-regrow process for now. Meanwhile, the co-doping or interaction effect of donors (Si) and acceptors (Mg) could make the interface issue more complex [24]- [26].…”

Section: Introductionmentioning

confidence: 99%

Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes

Zhou

Deng

et al. 2020

IEEE J. Electron Devices Soc.

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Vertical GaN-on-GaN Schottky barrier diodes based on as-grown and regrown samples were fabricated to investigate the effects of the etch-then-regrow process on device performance. The surface roughness increased slightly after dry etching and decreased after regrowth. According to X-ray diffraction results, the etch-then-regrow process caused a slight increase of defect density due to increased edge dislocations. Schottky parameters extracted from forward current-voltage curves, such as turn-on voltages of 0.74 V and 0.72 V, ideality factors of 1.07 and 1.10, and barrier heights of 1.07 eV and 1.05 eV, were obtained for diodes based on the regrown and as-grown samples, respectively. The breakdown voltage of the regrown sample was much lower than the as-grown sample. The regrowth interface can be regarded as a n-doping GaN layer due to the high interface charge density after the etch-then-regrown process. This equivalent n-doping GaN layer reduced the effective thickness of the UID-GaN under the Schottky contact thus causing lower breakdown voltage for the regrown sample. Poole-Frenkel emission and trap-assisted tunneling processes were responsible for the leakage of both as-grown and regrown samples according to the temperature dependence of the reverse currents.INDEX TERMS Schottky barrier diodes, GaN-on-GaN, regrow, leakage, interface.

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Section: Introductionmentioning

confidence: 99%

Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes

Zhou

Deng

et al. 2020

IEEE J. Electron Devices Soc.

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“…Figure 7 shows the J-and normalized differential resistance against V characteristics. The devices shows a record-low differential resistance of 1.6 × 10 -4 Ω-cm 2 at 5 kA/cm 2 which is the lowest value ever reported [23] for all-MOCVD grown GaN TJ devices. After the device turns on, the differential resistance drops until 5 kA/cm 2 and stays nearly constant in the current range from 5 kA/cm 2 -10 kA/cm 2 .…”

Section: Delta-dosementioning

confidence: 70%

“…Moreover, a polarization-engineered heterostructure by inserting a thin InGaN interlayer within the TJ shows great promise for interband tunneling [21,22]. demonstrated sidewall-activated GaN TJ with differential resistivity as low as 2.4 × 10 -4 Ω-cm 2 at 5 kA/cm 2 for a single run without any regrowth [23]. However, a controlled overlap between Mg and Si dopants reported in the work may affect the reproducibility of the device performance.…”

Section: One Of the Major Challenges For Achieving Low-resistivitymentioning

confidence: 94%

All-MOCVD-grown gallium nitride diodes with ultra-low resistance tunnel junctions

Hasan¹,

Eddine²,

Chandrasekar³

et al. 2021

J. Phys. D: Appl. Phys.

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We carefully investigate three important effects including postgrowth activation annealing, delta (δ) dose and magnesium (Mg) buildup delay as well as experimentally demonstrate their influence on the electrical properties of GaN homojunction p–n diodes with a tunnel junction (TJ). The diodes were monolithically grown by metalorganic chemical vapor deposition (MOCVD) in a single growth step. By optimizing the annealing parameters for Mg activation, δ-dose for both donors and acceptors at TJ interfaces, and p +-GaN layer thickness, a significant improvement in tunneling properties is achieved. For the TJs embedded within the continuously-grown, all-MOCVD GaN diode structures, ultra-low voltage penalties of 158 mV and 490 mV are obtained at current densities of 20 A cm−2 and 100 A cm−2, respectively. The diodes with the engineered TJs show a record-low differential resistivity of 1.6 × 10−4 Ω cm2 at 5 kA cm−2.

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“…One solution to this problem is forming a tunnel junction (TJ) for the anode contact of a deep-UV LED, because an n-type electrode with a low contact resistance is available. Table 1 lists previously reported LEDs having TJ-based anode contacts [20][21][22][23][24][25][26][27][28][29][30][31]. Some issues are faced in realizing a TJ-LED with a high-Al composition.…”

Section: Of 12mentioning

confidence: 99%

Improvement of Algan Homoepitaxial Tunnel Junction Deep-UV Light-Emitting Diodes by Controlling the Growth of N-Type Algan and Polycrystalline Mgzno/Al Electrodes

Nagata¹,

Matsubara²,

Saito³

et al. 2023

Preprint

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Deep-ultraviolet (UV) light-emitting diodes (LEDs) based on AlGaN crystals have low light-emission efficiency; therefore, there is a need to improve this light-emission efficiency for a wide range of applications such as water and air sterilizations. UV-light-transparent device structures are considered one of the many solutions toward increasing light output power. To this end, the present study focused on developing a transparent AlGaN-based tunnel junction (TJ) as the anode of a deep-UV LED. Deep-UV LEDs composed of n+/p+-type AlGaN TJs were fabricated under the growth condition that reduced the carrier compensation in the n+-type AlGaN layers. The operating voltage was 10.8 V under the direct current (DC) operation of 63 A/cm2. In addition, magnesium zinc oxide (MgZnO)/Al reflective electrodes were fabricated to enhance the output power of the AlGaN homoepitaxial TJ LED. The output power was 57.3 mW under a DC operation of 63 A/cm2, and it was 1.7 times higher than that realized using the conventional Ti/Al electrodes. The combination of the AlGaN-based TJ and MgZnO/Al reflective contact allows further improvement of the light output power. This study confirms that the AlGaN TJ is a promising UV-transmittance structure that can obtain a high light-extraction efficiency.

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Doping profiles in low resistive GaN tunnel junctions grown by metalorganic vapor phase epitaxy

Cited by 32 publications

References 29 publications

Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes

Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes

All-MOCVD-grown gallium nitride diodes with ultra-low resistance tunnel junctions

Improvement of Algan Homoepitaxial Tunnel Junction Deep-UV Light-Emitting Diodes by Controlling the Growth of N-Type Algan and Polycrystalline Mgzno/Al Electrodes

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