Doping properties of Ge on GaAs (100) grown by MBE

Kawanaka, M.; Sone, J.

doi:10.1016/0022-0248(89)90433-8

Cited by 26 publications

(12 citation statements)

References 3 publications

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“…For practical device applications of Ge, both n-and p-type dopings, especially the p-type doing because of its small effective hole-mass, are necessary [18,20,21]. The high hole mobility of pGe makes it one of the most suitable candidates for fabricating metal-oxide-semiconductor field effect transistor (p-MOSFET) and thus can replace silicon in the CMOS technology.…”

Section: Introductionmentioning

confidence: 99%

“…The epitaxy of Ge/GaAs has also attracted much attention in recent years [14][15][16][17]. For the growth of Ge on GaAs, although ADB defects are not a major concern, the difference in valence structures between Ge and GaAs makes a challenge for the epitaxial growth even by the most advanced semiconductor technologies-molecular beam epitaxy (MBE) and MOCVD [18,19].…”

Section: Introductionmentioning

confidence: 99%

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P-type Ge epitaxy on GaAs (100) substrate grown by MOCVD

Jin

Chia

Liu

et al. 2016

Applied Surface Science

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

P-type Ge epitaxy on GaAs (100) substrate grown by MOCVD

Jin

Chia

Liu

et al. 2016

Applied Surface Science

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“…For Ge films grown rapidly [5] at 1100 nra/rain this switch occurred above 600"C; in contrast, MBE-grown Ge films [7] turn p-type around 440"C. Films grown from molecular jets at slow growth rates (comparable to MBE rates) exhibited the same carrier type and carrier concentration as the MBE-grown material. In general, mok cular jet-grown Ge films were less compensated, and consequently had higher carrier mobilities, than the MBE-grown material [5].…”

Section: Resultsmentioning

confidence: 92%

High-Speed Epitaxy Using Supersonic Molecular Jets

Eres

1990

MRS Proc.

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This paper discusses the use of supersonic jets of gaseous source molecules in thin film growth. Molecular jets in free form with no skimmers or collimators in the nozzle-substrate path were used in the investigation of basic film growth processes and in practical film growth applications. The Ge growth rates were found to depend linearly on the digermane jet intensity. Furthermore, the film thickness distributions showed excellent agreement with the distribution of digermane molecules in the jet. High epitaxial Ge growth rates were achieved on GaAs (100) substrates by utilizing high-intensity pulsed jets. The practical advantages and limitations of this film growth technique are evaluated, based on the results of microstructural and electrical measurements of heteroepitaxial Ge films on GaAs (100) substrates.

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“…The studies of growth mechanisms of thin Ge films on GaAs [1][2][3][4][5] show that Ge films grow on GaAs (100) in the layer-by-layer (Franck-van der Merwe) mode at temperatures below about 400 С, whereas at higher temperatures growth occurs by the island (Stranski-Krastanov) growth mechanism. Numerous studies have been reported on the influence of the substrate temperature and the GaAs surface composition on the electrical properties of Ge films and heterojunctions [1,[6][7][8][9]. However, the effect of the deposition rate on the properties of thin Ge films on GaAs has not been investigated thoroughly; in most of the reports rather high film deposition rates have been chosen as a rule.…”

Section: Introductionmentioning

confidence: 99%

Structural study of Ge/GaAs thin films

Lazarov

Lari

Lytvyn

et al. 2012

J. Phys.: Conf. Ser.

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Abstract. Ge/GaAs heterostructure research is largely motivated by the application of this material in solar cells, metaloxidesemiconductor field-effect transistors, mm-wave mixer diodes, temperature sensors and photodetectors. Therefore, understanding of how the properties of Ge/GaAs heterostructure depend on its preparation (growth) is of importance for various high-efficiency devices. In this work, by using thermal Ge evaporation on GaAs(100), we studied structural properties of these films as a function of the deposition rate. Film grains size and morphology show strong dependence of the deposition rate. Low deposition rates results in films with large crystal grains and rough surface. At high deposition rates films become flatter and their crystal grains size decreases, while at very high deposition rates films become amorphous. Cross-sectional TEM of the films show that the Ge films are granular single crystal epitaxially grown on GaAs. The Ge/GaAs interface is atomically abrupt and free from misfit dislocations. Stacking faults along the [111] directions that originate at the interface were also observed. Finally by using the Kelvin probe microscopy we show that work function changes are related to the grain structure of the film.

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Doping properties of Ge on GaAs (100) grown by MBE

Cited by 26 publications

References 3 publications

P-type Ge epitaxy on GaAs (100) substrate grown by MOCVD

P-type Ge epitaxy on GaAs (100) substrate grown by MOCVD

High-Speed Epitaxy Using Supersonic Molecular Jets

Structural study of Ge/GaAs thin films

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