Doping rate, Interface states and Polarization Effects on Dielectric Properties, Electric Modulus, and AC Conductivity in PCBM/NiO:ZnO/p-Si Structures in Wide Frequency Range

Demirezen, S.; Çetinkaya, H.G.; Altındal, Ş.

doi:10.1007/s12633-021-01640-0

Cited by 32 publications

(6 citation statements)

References 45 publications

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“…Their experimental outcomes revealed that ε′, ε′′, and tanδ alter substantially with frequency and voltage [30]. S. Demirezen et al explained the relationship between AC conductivity, complex permittivity, complexelectric modulus, and interface states through their study [31].…”

Section: Ac Conductivitymentioning

confidence: 99%

Investigation of structural, morphological, electric modulus, AC conductivity characteristics, and validation of software-based simulated impedance/material parameters of bicomponent Co-Al doped Ba-Sr ferrites

Aherrao¹,

Singh²,

Mathe³

et al. 2022

Phys. Scr.

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In this report, Co2+ and Al3+ doped M-type Ba-Sr hexagonal ferrite has been synthesized using sol-gel method. The crystal structure and grain morphology have been examined by X-ray Diffraction (XRD), and Field Emission Scanning Electron Microscope (FESEM). The optical band gap of the prepared compositions was determined by ultra violet visible spectroscopy (UV-Vis). The dielectric, impedance, electric modulus, and conductivity characteristics have been investigated by an impedance analyzer at room temperature. The structural parameters confirmed the formation of an M-type hexagonal crystal structure along with traces of spinel and magnetite phase. The doping Co2+/Al3+ manifests the contraction of the unit cell accompanied by a reduction in lattice constants at a large doping level. The grain morphology revealed a change in grain shape with doping and the formation of needle-shaped as well as hexagonal-shaped grains. The study of the dielectric spectrum exhibited a doping-dependent decrease in dielectric constant and an increase in loss tangent. The electric modulus spectra confirmed the non-Debye type behavior of the material and conductivity relaxation was exhibited in conjunction with different relaxation times. Both relaxation time and ac conductivity decreased with an increase in doping content. The simulated complex impedance curves using electrochemical impedance spectroscopy (EIS) software are in agreement with the measured impedance values of prepared compositions. The observed trend in calculated grain and grain boundary parameters is in agreement with the grain/grain boundary distribution depicted in micrographs.

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Section: Ac Conductivitymentioning

confidence: 99%

Investigation of structural, morphological, electric modulus, AC conductivity characteristics, and validation of software-based simulated impedance/material parameters of bicomponent Co-Al doped Ba-Sr ferrites

Aherrao¹,

Singh²,

Mathe³

et al. 2022

Phys. Scr.

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“…Some previous studies have shown that traps/charges can significantly change C-G/𝜔 values, especially at low frequencies below 500 kHz, because they can easily track the ac signal [39]. However, at high frequencies (f ≥ 500 kHz), these traps/loads cannot track the ac signal and therefore do not cause significant changes in C-G/𝜔 values [31].…”

Section: Resultsmentioning

confidence: 99%

Negative Capacitance Phenomenon in GaAs-Based MIS Devices Under Ionizing Radiation

Kaymaz

2023

Balkan Journal of Electrical and Computer Engineering

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This study focuses on the abnormal peaks observed in voltage-dependent capacitance graphs and negative capacitance behaviors of the GaAs-based MOS devices for the unirradiated sample and after exposing the device to 5 and 10 kGy ionizing (gamma) radiation doses. Experimental results showed that the amplitude of the abnormal peaks, observed at about 1.75 V, increases with the irradiation dose. The peak point was also shifted toward the positive biases after irradiation. Furthermore, the conductance values increased rapidly and reached their maximum level, while the capacitance values reached their minimum level in the high voltage biases. This situation is directly related to the inductive behavior of the MOS devices. However, it has been determined that the MOS device's inductive behavior is more effective after irradiation. These behaviors can be observed because of the ionization process, the MOS device's series resistance, surface states, and due to some displacement damages caused by ionizing radiation. Therefore, the series resistance and the radiation-induced surface states were obtained to clarify the impact of radiation on the device. It was seen that the radiation-induced surface states changed around 3x1012 for the maximum cumulative dose (10 kGy), and the series resistance values changed less than 2 Ω (it was obtained 8.74 Ω for 0 kGy and 6.82 Ω for 10 kGy). As a result, the degradation in the GaAs-based MOS device was determined to be insignificant for 10 kGy doses. Therefore, this MOS device can be safely used as an electronic component in radiation environments such as nuclear plants and satellite systems.

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“…This slows the ions' movement and reduces the σac value. The AC conductivity scatters at higher frequencies, and this scattering is related to the ions' faster backhopping, as shown by the bulk relaxation phenomenon [53]. Furthermore, the applied frequency, TiO2/V, and TBAI all play a role in determining σac's value.…”

Section: Dielectric Characteristicsmentioning

confidence: 98%

Structural, optical, and dielectric properties of PMMA/PEO blend loaded with TiO 2 /V/TBAI

El‐Naggar

Kamal

Mohamed

2023

Preprint

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Blended polymer films based on poly (methyl methacrylate) (PMMA), and poly ethylene oxide (PEO), vanadium doped nano titanium dioxide (TiO2/V) and different amount of tetrabutylammonium iodide (TBAI) were formed by the sol gel and solution casting methods. Rietveld refinement for synchrotron x-ray diffraction was used to investigate structure and microstructure of TiO2/V sample. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) studies revealed the incorporation of the fillers in the prepared blends. The degree of roughness of different films were explored using SEM technique. The effect of TiO2/V and TBAI doping on linear/nonlinear optical parameters, dielectric constant, electric modulus, energy stored and ac conductivity of PMMA/PEO blend was studied using diffused reflectance and LCR meter techniques. The blended polymer's direct and indirect band gaps (5.03, 4.96) eV shrank to (4.99, 4.64) eV as it loaded with TiO2/V and reduced further (4.33, 4.02) eV as it loaded with TBAI. At 500 nm, the refractive (n) value of undoped blend is 1.76 and blend with TiO2/V and 2.5 wt % TBAI has the highest n value (2.16) while blend with TiO2/V and 10 wt % TBAI has the lowest n value (2.06). The influence of doping on the emitted colors from each blend was explored using fluorescence technique and CIE diagram. The controllable optical and electrical features reveal that the PMMA/PEO with TiO2/V and TBAI blends could be potential optical materials in the advances of futuristic flexible-type optoelectronic devices.

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Doping rate, Interface states and Polarization Effects on Dielectric Properties, Electric Modulus, and AC Conductivity in PCBM/NiO:ZnO/p-Si Structures in Wide Frequency Range

Cited by 32 publications

References 45 publications

Investigation of structural, morphological, electric modulus, AC conductivity characteristics, and validation of software-based simulated impedance/material parameters of bicomponent Co-Al doped Ba-Sr ferrites

Investigation of structural, morphological, electric modulus, AC conductivity characteristics, and validation of software-based simulated impedance/material parameters of bicomponent Co-Al doped Ba-Sr ferrites

Negative Capacitance Phenomenon in GaAs-Based MIS Devices Under Ionizing Radiation

Structural, optical, and dielectric properties of PMMA/PEO blend loaded with TiO 2 /V/TBAI

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