“…Concerning the properties of doped fullerenes, their electronic behavior was reported in [5]; then properties of C 59 X-type fullerenes (where X = B, N, Al, Si, P, Ga, Ge and As) [6], applications of N-doped carbon nanotubes [7], electron delocalization and dimerization in solid C 59 N doped C 60 fullerene [8], structure and electronic properties of heterofullerene C 30 B 15 N 15 [9], stability of boron nitride fullerenes [10], also small fullerenes doped with boron and nitrogen [11] have been reported. Possible isomers of heterofullerenes of the type X n C 20-n (X = B, N, P and n = 2, 4, 5, 6, 10) were also studied [12].…”