Doping the Undopable: Hybrid Molecular Beam Epitaxy Growth, n-Type Doping, and Field-Effect Transistor Using CaSnO<sub>3</sub>

Liu, Fengdeng; Golani, Prafful; Truttmann, Tristan K.; Evangelista, Igor; Smeaton, Michelle A.; Bugallo, David; Wen, Jiaxuan; Manjeshwar, Anusha Kamath; May, Steven J.; Kourkoutis, Lena F.; Janotti, Anderson; Koester, Steven J.; Jalan, Bharat

doi:10.1021/acsnano.3c04003

Cited by 5 publications

(3 citation statements)

References 52 publications

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“…As we can see from this figure, the results at +40 V were negligible for both NMOS and PMOS transistors. In Figure 4, it is illustrated that the NBT stress under typical conditions yielded practically identical V T shifts in p-and n-channel VDMOS devices, which is a characteristic unique only to these components [6]. The corresponding PBT stress, however, did not seem to significantly affect threshold voltage in either of the two device types.…”

Section: Current-voltage Characteristicsmentioning

confidence: 90%

“…It is important to note that in some applications, MOS devices can be used for gas sensors, photoconductors, transistor-based electronics, and especially for neuromorphic transistors [5,6]. Over the past few years, field-effect transistors (FET) have experienced expansion, and an increasing number of authors are conducting research on their reliability.…”

Section: Introductionmentioning

confidence: 99%

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A Reliability Investigation of VDMOS Transistors: Performance and Degradation Caused by Bias Temperature Stress

Živanović,

Veljković,

Mitrović

et al. 2024

Micromachines

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This study aimed to comprehensively understand the performance and degradation of both p- and n-channel vertical double diffused MOS (VDMOS) transistors under bias temperature stress. Conducted experimental investigations involved various stress conditions and annealing processes to analyze the impacts of BT stress on the formation of oxide trapped charge and interface traps, leading to threshold voltage shifts. Findings revealed meaningful threshold voltage shifts in both PMOS and NMOS devices due to stresses, and the subsequent annealing process was analyzed in detail. The study also examined the influence of stress history on self-heating behavior under real operating conditions. Additionally, the study elucidated the complex correlation between stress-induced degradation and device reliability. The insights contribute to optimizing the performance and permanence of VDMOS transistors in practical applications, advancing semiconductor technology. This study underscored the importance of considering stress-induced effects on device reliability and performance in the design and application of VDMOS transistors.

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Section: Current-voltage Characteristicsmentioning

confidence: 90%

Section: Introductionmentioning

confidence: 99%

A Reliability Investigation of VDMOS Transistors: Performance and Degradation Caused by Bias Temperature Stress

Živanović,

Veljković,

Mitrović

et al. 2024

Micromachines

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“…Strontium stannate with the perovskite (ABO 3 )-type structure, SrSnO 3 (SSO), is known as an n-type transparent oxide semiconductor (TOS) as observed in other alkaline earth stannates, BaSnO 3 (BSO) and CaSnO 3 (CSO). , Utilizing the semiconducting properties, the alkaline earth stannates are anticipated for functional electronic materials such as chemical sensors, − thermoelectric materials, − and transparent conducting oxides. − SSO doped with donors such as La 3+ and Ta 5+ provides conducting behavior (conductivity σ ≈ 10 1 –10 3 S cm –1 ), which is usually observed only in dense sintered bodies and high-quality thin films. − The moderate conducting behavior makes a distinction between doped SSO and other doped stannates, BSO and CSO, which give usually higher conducting and lower conducting behavior, respectively. − Although not only La 3+ ions but also lanthanide ions (Ln 3+ ) are doped at A sites in these stannates, , the Ln 3+ ions are simply utilized as donors to generate electron carriers in the conduction band (CB), which mainly consists of the 5s orbitals of Sn 4+ ions at B sites. , …”

Section: Introductionmentioning

confidence: 99%

Host-to-Activator Energy Transfer Developed by Eu³⁺ Doping at B Sites in Perovskite-Type Strontium Stannate Phosphor

Ueda,

Ogata,

Nakamura

et al. 2024

J. Phys. Chem. C

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Atomically Resolved Surface Reconstruction of WO₃ (002)

Cao,

Xia,

et al. 2024

Small

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The rearrangement of surface atoms in oxide nanocrystals, namely surface reconstruction, plays an important role in improving the physical and chemical properties of metal oxides. However, structural information pertaining to reconstructed surfaces is scarce due to the challenges associated with directly imaging surface and sub‐surface atoms under reconstruction conditions. Herein, the reconstruction of the nanocrystalline tungsten trioxide (002) surface is directly investigated via scanning transmission electron microscope (STEM). The results reveal that the atoms on the reconstructed WO3 (002) surface are rearranged into a (1 × 2) structure, and the structural model is determined by density functional theory (DFT) calculation. In addition, after surface reconstruction, the Fermi level shifted toward the conduction band compared to the initial surface, achieving an effect similar to n‐type doping. Surprisingly, analogous atomic rearrangements are also observed in cracks, indicating that sub‐nanometer fractures in tungsten trioxide can be remedied through surface reconstruction, thus proposing an unconventional mechanism for crack healing. Furthermore, DFT calculations are used to analyze the models and electronic properties of the reconstruction structures. These findings provide insights into the surface reconstruction of WO3 (002) and the healing of nanoscale cracks in tungsten trioxide.

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Doping the Undopable: Hybrid Molecular Beam Epitaxy Growth, n-Type Doping, and Field-Effect Transistor Using CaSnO₃

Cited by 5 publications

References 52 publications

A Reliability Investigation of VDMOS Transistors: Performance and Degradation Caused by Bias Temperature Stress

A Reliability Investigation of VDMOS Transistors: Performance and Degradation Caused by Bias Temperature Stress

Host-to-Activator Energy Transfer Developed by Eu³⁺ Doping at B Sites in Perovskite-Type Strontium Stannate Phosphor

Atomically Resolved Surface Reconstruction of WO₃ (002)

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Doping the Undopable: Hybrid Molecular Beam Epitaxy Growth, n-Type Doping, and Field-Effect Transistor Using CaSnO3

Cited by 5 publications

References 52 publications

A Reliability Investigation of VDMOS Transistors: Performance and Degradation Caused by Bias Temperature Stress

A Reliability Investigation of VDMOS Transistors: Performance and Degradation Caused by Bias Temperature Stress

Host-to-Activator Energy Transfer Developed by Eu3+ Doping at B Sites in Perovskite-Type Strontium Stannate Phosphor

Atomically Resolved Surface Reconstruction of WO3 (002)

Contact Info

Product

Resources

About

Doping the Undopable: Hybrid Molecular Beam Epitaxy Growth, n-Type Doping, and Field-Effect Transistor Using CaSnO₃

Host-to-Activator Energy Transfer Developed by Eu³⁺ Doping at B Sites in Perovskite-Type Strontium Stannate Phosphor

Atomically Resolved Surface Reconstruction of WO₃ (002)