Dose Loss and Defect Mechanisms in Antimony Buried Layers for a 0.35um BiCMOS Process

Abstract

An antimony buried layer is developed for a 0.35um BiCMOS process. Antimony buried layers can cause stacking fault defects to propagate through the epilayer deposited on it. These can result in device failure mechanisms such as collectoremitter pipes etc. This paper outlines the understanding of this defect mechanism derived by a combination of physical analysis combined with process simulation. Its relationship to the low solid solubility of antimony is established. In addition observed antimony dose loss from the buried layer is described.