Dose rate and total dose dependence of low frequency noise performance, I-V curves and sidegating for GaAs MESFETs

Hiemstra, David M.; Kizeevi, A.A.; Hou, L.Z.; Salama, C.A.T.

doi:10.1109/23.736505

Cited by 4 publications

(2 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…There is also a decrease in the initial slope of the curves at low bias, indicating a decrease in carrier mobility or concentration. Previous results in GaAs and GaN-based heterostructure transistors showed that both of these parameters were reduced by proton irradiation, 7,8,15 while the product of sheet resistance and mobility remained almost constant.…”

Section: Resultsmentioning

confidence: 86%

See 1 more Smart Citation

Effects of High Energy Proton Irradiation on DC Performance of GaAs Metal-Semiconductor Field Effect Transistors

Luo¹,

Johnson²,

Ren³

et al. 2002

J. Electrochem. Soc.

View full text Add to dashboard Cite

GaAs metal-semiconductor field effect transistors were exposed to 40 MeV protons at fluences up to 5×109 cm−2. The extrinsic transconductance decreased from 98 to 68 mS mm−1 over this fluence range, with the drain-source current decreasing by ∼30% under the same conditions. Based on the increases observed in the reverse breakdown voltage and the channel resistance, the main degradation mechanism appears to be introduction of deep electron traps which reduce the effective doping in the channel. The device threshold voltage and diode ideality factor showed little change upon irradiation. © 2002 The Electrochemical Society. All rights reserved.

show abstract

Section: Resultsmentioning

confidence: 86%

“…Past work has reported the effect of neutrons, electrons, cosmic rays, and gamma rays on the device characteristics of GaAs MESFETs. [5][6][7][8][9][10][11][12][13][14] Much less is known about the effects of high energy proton irradiation of the type encountered in satellites employed for broad-band transmission or weather forecasting.…”

mentioning

confidence: 99%