Dose Rate Effects on Total Dose Damage

Azarewicz, Joseph L.

doi:10.1109/tns.1986.4334616

Cited by 26 publications

(3 citation statements)

References 12 publications

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“…The higher dose rate used in this study than that used in the experiments in [15,16] may induce the enhanced dose effects on the trench-gate NPT IGBT devices. A higher dose rate was shown to induce a larger shift in threshold voltage of an n-channel MOS [24], because more interface-trapped charges are built by a lower dose rate, and, hence, negative interface-trapped charges compensate for the effect of the positive oxide-trapped charges.…”

Section: Resultsmentioning

confidence: 99%

Effects of gamma irradiation on the electrical characteristics of trench-gate non-punch-through insulated gate bipolar transistor

Baek

Yoon

Sun

et al. 2019

Semicond. Sci. Technol.

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We studied the effects of gamma-ray irradiation on the static and dynamic electrical characteristics of a trench-gate non-punch-through insulated gate bipolar transistor (IGBT) device. The threshold voltage and breakdown voltage decreased after irradiation, whereas the collector leakage current increased. Turn-on and turn-off switching times decreased and increased, respectively, with the irradiation dose. The irradiation-induced changes in the electrical characteristics can be attributed to the buildup of the positive oxide-trapped charges in the gate oxide by gamma irradiation. The evaluated characteristics data were compared with the data for gamma-irradiated planar-gate IGBTs reported in the literature. It was found that a significant degradation occurred in the shift of the threshold voltage and switching times for trench-gate IGBTs.

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Section: Resultsmentioning

confidence: 99%

Effects of gamma irradiation on the electrical characteristics of trench-gate non-punch-through insulated gate bipolar transistor

Baek

Yoon

Sun

et al. 2019

Semicond. Sci. Technol.

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“…In addition, because the total dose radiation response of irradiated MOSFETs can vary with dose rate [17,18], it is probable that there are dose rate effects on the total dose damage for the back transistor of SOI pMOSFETs. Therefore, further research on the dose-rate sensitivity of the back transistor of SOI pMOSFETs is necessary.…”

Section: Discussionmentioning

confidence: 99%

Total dose radiation and annealing responses of the back transistor of Silicon-On-Insulator pMOSFETs

Xing

Zheng

et al. 2015

Chinese Phys. C

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irradiation. However, with the Float-State bias, rather than the Off-State bias, the back transistors of SOI pMOSFETs reveal a much higher sensitivity to total dose radiation, which is contrary to those of SOI nMOSFETs. In addition, it is also found that the total dose radiation effect of the back transistor of SOI pMOSFETs irradiated with Off-State bias, as well as that of the SOI nMOSFETs, exhibits an increasing trend as the channel length decreases. The annealing response of the back transistors after irradiation at room temperature without bias, characterized by their threshold voltage shifts, indicates that there is a relatively complex annealing mechanism associated with channel length and type, bias condition during irradiation. In particular, for all the transistors irradiated with Off-State bias, their back transistors show an abnormal annealing effect during early annealing. All the results have been discussed and analyzed in detail by the aid of simulation.

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“…For the past two decades, research focused on the effects of ionizing radiation on semiconductor devices has shown that these manifest themselves in threshold voltage shifts, timing parameter changes and increases in supply currents, among others[3, 4, 5, 6]. Current research is concentrating particularly on dose rate issues[2], interface traps[7], total dose issues[1, 8], single event upsets (SEU)[9, 10] and test methods and procedures[1, 2].…”

Section: Introductionmentioning

confidence: 99%

The effects of ionizing radiation on the functional and parametric performance of NMOS static RAMs

Meniconi

Barry

Betts

1997

Int J Qual & Reliability Mgmt

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The degradation of both the functional and electrical parameter performance of integrated circuits has been under investigation for a number of years. Aims to demonstrate that statistical methods may be used to determine physical changes in these devices, rather than the time‐consuming and costly procedures of physical failure analysis. In addition, draws a comparison between the functional tests and the parametric tests. The data were obtained by stressing statistical samples of TMS2114L NMOS static RAMs to varying total doses of ionizing radiation. Presents and discusses the results obtained from these tests and suggests statistical and mathematical models to estimate performance degradation.

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Dose Rate Effects on Total Dose Damage

Cited by 26 publications

References 12 publications

Effects of gamma irradiation on the electrical characteristics of trench-gate non-punch-through insulated gate bipolar transistor

Effects of gamma irradiation on the electrical characteristics of trench-gate non-punch-through insulated gate bipolar transistor

Total dose radiation and annealing responses of the back transistor of Silicon-On-Insulator pMOSFETs

The effects of ionizing radiation on the functional and parametric performance of NMOS static RAMs

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