Double Active Layers Constructed with Halide Perovskite and Quantum Dots for Broadband Photodetection

Abstract

Herein, solution‐processed, high‐performance broadband (300–1100 nm) photodetectors based on double active layers incorporating narrow‐bandgap CuInSe2 (CISe) quantum dots (QDs) and halide perovskite are devised. The CISe QDs/perovskite film as the photoactive layer boosts the photocurrent and suppresses dark current. Due to the joint light absorption effect of CISe QDs and halide perovskite, the photoelectric conversion capacity is improved. Furthermore, CISe QDs as an electron‐blocking layer can effectively block electrons to the hole transport layer and reduce the thermal noise. The optimized photodetector exhibits responsivity over 150 mA W–1 in the visible and more than 20 mA W–1 in the near‐infrared (800–1000 nm) ranges, specific detectivity of more than 7.0 × 1012 Jones in the visible region and 7.7 × 1011 Jones in the near‐infrared region, a transient response time of 277 ns with the active area of 0.013 cm2, and a linear dynamic range of ≈75 dB. Importantly, the CISe QDs layer makes the perovskite denser and more hydrophobic, thus improves the environmental and thermal stability of the detector, even extends the working temperature to exceeding 150 °C. The design concept and the considerable performance of this novel device provide a reference value for polychromatic light detection.

Hybrid Halide Perovskite‐Based Near‐Infrared Photodetectors and Imaging Arrays

“…Narrow-bandgap materials, such as, inorganic QDs (e.g., PbS, CuInSe 2 , PbSe, etc. ), [47][48][49] polymers (e.g., poly(diketopyrrolopyrrole-terthiophene) (PDPP3T), poly{2,5-bis(2-hexyldecyl)-2,5-dihydropyrrolo [3,4- (DPP-DTT), etc. ), [50][51][52] small molecules (e.g.…”

Broadband Photodetector Based on Inorganic Perovskite CsPbBr3/GeSn Heterojunction

“…Previously, photodetector based on perovskite with Si, [ 27 ] Ge, [ 28 ] ZnO [ 29,30 ] or PbSe, [ 31 ] CuInSe 2 , [ 32 ] have been successfully demonstrated, and the photo‐response can be covered from about visible region to near infrared region. [ 33 ] A brief summary of comparison of various photodetectors is shown in Table S1 (Supporting Information).…”

“…[20][21][22][23] However, it is difficult to produce perovskite with narrow bandgap and its absorption cutoff wavelength can hardly extend longer than 1000 nm. Therefore, a hybrid structure combining perovskite and traditional semiconductor materials is one of a promising alternative to realize a high performance broadband photodetector.Previously, photodetector based on perovskite with Si, [27] Ge, [28] ZnO [29,30] or PbSe, [31] CuInSe 2 , [32] have been successfully demonstrated, and the photo-response can be covered from about visible region to near infrared region. [33] A brief summary of comparison of various photodetectors is shown in Table S1 (Supporting Information).…”

Nonlinear Optics in Lead Halide Perovskites: Mechanisms and Applications

“…1−3 Because of their low preparation cost, high luminous efficiency, 4,5 adjustable band gap, 6,7 high absorption coefficient, 8,9 high carrier mobility, 10,11 and long diffusion length, 12,13 perovskites have become star materials for semiconductors and have been used in various optoelectronic devices such as solar cells, 14,15 light-emitting diodes, 16,17 lasers, 18,19 and photodetectors. 20,21 In recent years, it has been found that lead halide perovskites also have good properties in nonlinear optics (NLO), especially their third-order nonlinear absorption response, which makes their application in nonlinear optical materials and devices possible. 22,23 In this paper, the third-order and higher-order nonlinear optics of lead halide perovskites are reviewed.…”

“…Their general formula can be represented as ABX 3 , in which A is a monovalent organic cation such as methylammonium (MA + ) or formamidinium (FA + ) or the inorganic metal ion Cs + , B is generally Pb 2+ , and X is a halide ion. In three-dimensional space, BX 6 octahedra form the three-dimensional skeleton via common vertexes, while A cations reside in the gaps of the octahedra. − Because of their low preparation cost, high luminous efficiency, , adjustable band gap, , high absorption coefficient, , high carrier mobility, , and long diffusion length, , perovskites have become star materials for semiconductors and have been used in various optoelectronic devices such as solar cells, , light-emitting diodes, , lasers, , and photodetectors. , …”