2001
DOI: 10.1109/77.919551
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Double-barrier Josephson junctions: theory and experiment

Abstract: Abstract-New theoretical and experimental results on double-barrier SIS'IS Josephson junctions are presented (1 is a tunnel barrier, S' is a thin film with critical temperature lower than that of S). The previously developed microscopic model for the stationary case, which describes the critical currents in Nb/AI/Nb junctions, is extended to the non-equilibrium regime of finite voltage. In particular, an intrinsic shunting resistance is estimated from I-V curves. We formulate the requirements for interface bar… Show more

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Cited by 12 publications
(9 citation statements)
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“…2001;Hagedorn et al, 2001Hagedorn et al, , 2002Kaul and van Duzer, 2001;Ohta et al, 2001;Schubert et al, 2001; van Duzer et al, 2002. 5 See Amin et al, 1992;Nevirkovets, 1995Nevirkovets, , 1997Capogna and Blamire, 1996;Nevirkovets et al, 1996Capogna et al, 1997;Maezawa and Shoji, 1997;Sugiyama et al, 1997Sugiyama et al, , 1999Balashov et al, 1998Balashov et al, , 1999Balashov et al, , 2001Schulze et al, 1998Behr et al, 1999;Buchholz and Kessel, 1999;Brinkman et al, 1999Brinkman et al, , 2001Khabipov et al, 1999Khabipov et al, , 2002aKhabipov et al, , 2002bKupriyanov et al, 1999;Buchholz et al, 2001;Cassel et al, 2001;Kohlmann et al, 2001Kohlmann et al, , 2002Nevirkovets, Ketterson, and Rowell, 2001;Nevirkovets, Ketterson, and Siegel, 2001;Shaternik et al, 2001;Kieler et al, 2002;Nevirkovets and Ketterson, 2002;Yamamori et al, 2002;Tolpygo, Brinkman, et al, 2003. between the S electrodes. Until now, only a planar geometry has been realized in experiments by…”
Section: B Basic Josephson Structuresmentioning
confidence: 99%
“…2001;Hagedorn et al, 2001Hagedorn et al, , 2002Kaul and van Duzer, 2001;Ohta et al, 2001;Schubert et al, 2001; van Duzer et al, 2002. 5 See Amin et al, 1992;Nevirkovets, 1995Nevirkovets, , 1997Capogna and Blamire, 1996;Nevirkovets et al, 1996Capogna et al, 1997;Maezawa and Shoji, 1997;Sugiyama et al, 1997Sugiyama et al, , 1999Balashov et al, 1998Balashov et al, , 1999Balashov et al, , 2001Schulze et al, 1998Behr et al, 1999;Buchholz and Kessel, 1999;Brinkman et al, 1999Brinkman et al, , 2001Khabipov et al, 1999Khabipov et al, , 2002aKhabipov et al, , 2002bKupriyanov et al, 1999;Buchholz et al, 2001;Cassel et al, 2001;Kohlmann et al, 2001Kohlmann et al, , 2002Nevirkovets, Ketterson, and Rowell, 2001;Nevirkovets, Ketterson, and Siegel, 2001;Shaternik et al, 2001;Kieler et al, 2002;Nevirkovets and Ketterson, 2002;Yamamori et al, 2002;Tolpygo, Brinkman, et al, 2003. between the S electrodes. Until now, only a planar geometry has been realized in experiments by…”
Section: B Basic Josephson Structuresmentioning
confidence: 99%
“…Since complex circuits require the uniformity of junctions, this scaling strategy is practically limited to the junction size of a few tenths of a micron. Double-barrier, S-I -N -I -S, Josephson structures were proposed to mitigate the difficulties of the scaling [18,19]. If the N -layer thickness, d N , is much smaller then the decay length,…”
Section: Scalability Of Josephson Junctionsmentioning
confidence: 99%
“…Several methods for the fabrication of shunted JJs have been developed. These methods include the use of double-barrier junctions with an additional normal layer between two conventional JJs [17,18] and Nb/αSi/Nb structures with a doped Si layer [19]. However, the most widely used and best-developed method involves the use of Nb/Al-AlO x /Nb tunnel junctions [20,21] with an additional external resistive shunt made from Mo (Figure 1).…”
Section: Low-tc Vs High-tc Jjs and DC Squids: Technologies And Prmentioning
confidence: 99%