2000
DOI: 10.1016/s0921-4534(00)00837-6
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Double-barrier junction based dc SQUID

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Cited by 8 publications
(6 citation statements)
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References 13 publications
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“…10,11 A similar feature, and in the same voltage region, was later reported by Bartolome et al 18 It was suggested that the feature is related to phase-coherent transport; specifically, it may be the first direct observation of a resonant dc supercurrent carried by an ABS. 11 An important test of the ABS origin of this feature is provided by its response to a magnetic field H. In a recent work, we reported on a measurement of the magnetic-field dependence of the height of the step, I c (1) , with improved resolution, 13 so that comparison with the theory could be made more reliably.…”
Section: Introductionsupporting
confidence: 77%
“…10,11 A similar feature, and in the same voltage region, was later reported by Bartolome et al 18 It was suggested that the feature is related to phase-coherent transport; specifically, it may be the first direct observation of a resonant dc supercurrent carried by an ABS. 11 An important test of the ABS origin of this feature is provided by its response to a magnetic field H. In a recent work, we reported on a measurement of the magnetic-field dependence of the height of the step, I c (1) , with improved resolution, 13 so that comparison with the theory could be made more reliably.…”
Section: Introductionsupporting
confidence: 77%
“…neglecting contributions of Π P,S to the function K in Eq. (34). As is obvious from this expression, the parameter τ d drops out from I (1) , and we obtain a simple formula…”
Section: Analytical Resultsmentioning
confidence: 81%
“…Such junctions have been developed using Nb/AlO x /Al/AlO x /Nb technology, and they demonstrated rather large values of γ ∼ 10 4 and a pronounced deficit current. [34][35][36] This is precisely the limit of large electron-hole dephasing studied in this paper. In order to investigate a crossover to the regime of small dephasing at γ ∼ 1 one needs to use junctions with more transparent NS interfaces, such as junctions based on diffusive InAs 2D electron gas or graphene, or corresponding nanowires and nanotubes.…”
Section: Discussionmentioning
confidence: 99%
“…From resonances in the SQUID washer, C was determined to be 0.015 pF/µm 2 , corresponding to the capacitance of two SIS junctions in series. 58 It is assumed that this value is only weakly depending on the transparency of the barrier. The dependence of I c and R N on the junction parameters, such as γ eff , follow from the modeling of the stationary properties in Ref.…”
Section: Application: the Nature Of The Intrinsic Shuntmentioning
confidence: 99%