Double cascade dressed MOSFET from doped Eu³⁺and Pr³⁺ in a host YPO₄

Abstract

In this paper, we study double cascade dressed optical metal oxide semiconductor field-effect transistor (MOSFET) by exploiting enhancement and suppression for mixed-phase (hexagonal + tetragonal) of Eu 3+ :YPO 4 and different phases (hexagonal + tetragonal and pure tetragonal) of Pr 3+ :YPO 4 crystals. We report variation of fine structure energy levels in different doped ions (Eu 3+ and Pr 3+ ) in the host YPO crystal. We compared multi-level energy transition from a single dressing laser with single level energy transition from double cascade dressing lasers. Gate delay facilitates multi-energy level dressed transition and is modeled through a Hamiltonian. Based on the results of double cascade dressing, we have realized MOSFET for logic gates (inverter and logic not and gate) with a switching contrast of about 92% using a mixed phase of Pr 3+ :YPO 4 .

Temporal and spectral hybrid bound state in continuum and its reliance on the correlation

“…ð Þ respectively, can be expanded using Taylor expansion Interference perhaps constructive (|r (3) AS | + |r (5) AS |) = |r (3) AS | + |r (5) AS | or destructive (|r (3) AS | À |r (5) AS |) = |r (5) AS | À |r (5) AS |, conditional to the total phase remains either zero or p, where r ð3Þ…”

“…2 The ions Eu 3+ and Pr 3+ are extremely sensitive to the site symmetry of the host material and its surrounding crystal field, making them an attractive candidate for numerous applications. [3][4][5] The optical properties of these rare-earth ions doped in different host media have been studied. 6,7 The nonlinear behaviour of these crystal fields can be modified by controlling different parameters such as power, temperature and bandwidth, and gate position.…”

Multi-channel router and logic NAND gate from multiple Autler–Townes splitting controlled by phase transition

“…The lifetime of the Stokes signal can be written as 21 . Similarly, fourth-order FL in a^-type system via the pathway r 00 !…”

“…19,20 In this regard, a double-cascade dressed optical metal oxide semiconductor eld-effect transistor is realized by exploiting the enhancement and suppression in different phases of Eu 3+ :YPO 4 and Pr 3+ :YPO 4 crystals. 21 YPO 4 crystallizes with the zircon structure (xenotimetype) with a tetragonal symmetry (a ¼ b ¼ 0.6894 nm and c ¼ 0.6027 nm) and space group I4 1 /amd, 22 where the site symmetry for Y 3+ ions is the D 2d point-group. 23 The structure can be described as chains parallel to the c-axis of the corner-sharing structural units built of (YO 8 ) dodecahedron and a (PO 4 ) tetrahedron linked together by an edge.…”

Reprogrammable and Reconfigurable Photonic Molecular Logic Gates Based on Ln3+ Ions

“…Among the distinct emitting centers reported so far for molecular logics, lanthanide ions (Ln 3+ ) containing materials (both inorganic crystals and β-diketone complexes) appear as a sagest choice. These systems can respond to both chemical [34] and physical [35,36] stimuli possessing unique emission features such as high luminescence quantum yield, narrow bandwidth, long-lived emission, and, for complexes, large Stokes shifts and ligand-dependent luminescence sensitization. [37] The first example of sequential logic and arithmetic operations based exclusively on physical inputs (temperature and UV irradiation) and operating in non-wet conditions were recently reported by some of us using silicon-based structures modified with Ln 3+ β-diketone complexes.…”