Double-channel E-Mode AlGaN/GaN HEMTs with an electron-blocking-layer structure

Chang, Yang-Hua; Yang, Luhao

doi:10.1109/edssc.2017.8126471

Cited by 1 publication

(4 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[12] L is the gate length. The electrostatic potential V(z) is further expressed as 9) and (10), respectively.…”

Section: Drain-source Current Modelmentioning

confidence: 99%

“…[ 8 ] Enhancement‐mode dual‐channel devices even provide higher gate control capability; thus, V TH can be precisely controlled. [ 9,10 ]…”

Section: Introductionmentioning

confidence: 99%

“…[8] Enhancement-mode dual-channel devices even provide higher gate control capability; thus, V TH can be precisely controlled. [9,10] However, researches on models of dualchannel AlGaN/GaN HEMTs are still limited and significant efforts have been made to characterize physics-based models for single-channel structures. Accurate compact physics-based V TH models are offered to investigate the circuit simulation in AlGaN/GaN HEMTs.…”

Section: Introductionmentioning

confidence: 99%

“…The Fermi level ΔE f2 as a function of the 2DEG density n s2 . The dashed line and solid line are obtained by Equation (9) and(10), respectively.…”

mentioning

confidence: 99%

See 3 more Smart Citations

A Threshold‐Voltage and Drain–Source Current Model for Double‐Channel Al_xGa_1−xN/GaN/Al_yGa_1−yN/GaN High‐Electron‐Mobility Transistors

Cai,

Yao,

Liu

et al. 2023

Physica Status Solidi (a)

View full text Add to dashboard Cite

Double‐channel AlGaN/GaN HEMTs are superior to single‐channel HEMTs in electronic localization, current transport and current collapse, which are of great significance in high‐power applications. A physics‐based threshold voltage and drain‐source current model based on double‐channel AlxGa1‐xN/GaN/AlyGa1‐yN/GaN HEMTs is proposed in this article. Electrons limited in the potential well are derived from ionized donor‐like surface states of the AlxGa1‐xN layer. Accumulated 2DEGs and positive charges left are equivalent to planar plate capacitors and further form electric fields, weakening the polarization fields in barrier layers. Consider the physical properties of the dual‐channel HEMT holistically rather than two separate and independent single heterojunctions. The effect of the charges and 2DEGs distributed in lower layers on the upper channel has been contained in our model as well. Subsequently, a drain‐source current model is proposed through coupling the critical electric field with the threshold voltage. The influence of channel length modulation, short channel effect, self‐heating effect, and kink effect is involved in this model. The accuracy of the proposed models is verified by comparison with TCAD simulations and the experimental results. Proposed models can greatly describe the output characteristics, the transmission characteristics, and the relationship between VTH and device parameters of double‐channel AlGaN/GaN HEMTs.This article is protected by copyright. All rights reserved.

show abstract

“…[12] L is the gate length. The electrostatic potential V(z) is further expressed as 9) and (10), respectively.…”

Section: Drain-source Current Modelmentioning

confidence: 99%

“…[ 8 ] Enhancement‐mode dual‐channel devices even provide higher gate control capability; thus, V TH can be precisely controlled. [ 9,10 ]…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…The Fermi level ΔE f2 as a function of the 2DEG density n s2 . The dashed line and solid line are obtained by Equation (9) and(10), respectively.…”

mentioning

confidence: 99%

See 2 more Smart Citations

A Threshold‐Voltage and Drain–Source Current Model for Double‐Channel Al_xGa_1−xN/GaN/Al_yGa_1−yN/GaN High‐Electron‐Mobility Transistors

Cai,

Yao,

Liu

et al. 2023

Physica Status Solidi (a)

View full text Add to dashboard Cite

show abstract

Double-channel E-Mode AlGaN/GaN HEMTs with an electron-blocking-layer structure

Cited by 1 publication

References 2 publications

A Threshold‐Voltage and Drain–Source Current Model for Double‐Channel Al_xGa_1−xN/GaN/Al_yGa_1−yN/GaN High‐Electron‐Mobility Transistors

A Threshold‐Voltage and Drain–Source Current Model for Double‐Channel Al_xGa_1−xN/GaN/Al_yGa_1−yN/GaN High‐Electron‐Mobility Transistors

Contact Info

Product

Resources

About

Double-channel E-Mode AlGaN/GaN HEMTs with an electron-blocking-layer structure

Cited by 1 publication

References 2 publications

A Threshold‐Voltage and Drain–Source Current Model for Double‐Channel AlxGa1−xN/GaN/AlyGa1−yN/GaN High‐Electron‐Mobility Transistors

A Threshold‐Voltage and Drain–Source Current Model for Double‐Channel AlxGa1−xN/GaN/AlyGa1−yN/GaN High‐Electron‐Mobility Transistors

Contact Info

Product

Resources

About

A Threshold‐Voltage and Drain–Source Current Model for Double‐Channel Al_xGa_1−xN/GaN/Al_yGa_1−yN/GaN High‐Electron‐Mobility Transistors

A Threshold‐Voltage and Drain–Source Current Model for Double‐Channel Al_xGa_1−xN/GaN/Al_yGa_1−yN/GaN High‐Electron‐Mobility Transistors