Double‐Gate MoS₂ Field‐Effect Transistors with Full‐Range Tunable Threshold Voltage for Multifunctional Logic Circuits

Abstract

Multifunctional reconfigurable devices, with higher information capacity, smaller size, and more functions, are urgently needed and draw most attention in frontiers in information technology. 2D semiconductors, ascribing to ultrathin body and easy electrostatic control, show great potential in developing reconfigurable functional units. This work proposes a novel double‐gate field‐effect transistor architecture with equal top and bottom gate (TG and BG) and realizes flexible optimization of the subthreshold swing (SS) and threshold voltage (VTH). While the TG and BG are used simultaneously, as a single gate to drive the transistor, ultralow average SS value of 65.5 mV dec−1 can be obtained in a large current range over 104, enabling the application in high gain inverter. While one gate is used to initialize the channel doping, full logic swing inverter circuit with high noise margin (over 90%) is demonstrated. Such device prototype is further extended for designing reconfigurable logic applications and can be dynamically switched and well maintained between binary and ternary logics. This study provides important concept and device prototype for future multifunctional logic applications.

Recent Progress on Two-Dimensional Materials

“…25d), which is desirable for constructing reconfigurable multifunctional logic circuits in a high area-efficiency manner 783 . Similarly, 2D semiconductor heterostructure based multifunctional logic circuit (i.e., threevalue logic inverter) was reported by using gate-tunable band alignment, showing great potential for future logic applications 778,788 .…”

“…The excellent electrostatic control of electrical field over the atomically-thin channel enables 2D materials to be useful not only for ultra-scaled FET 770 and logic circuits 94,[771][772][773][774][775][776] , but also in drastically simplifying the complex design of conventional silicon-based circuits [777][778][779][780][781][782][783][784][785][786][787] . Most of semiconducting TMDs are intrinsically n-type doped and can be used for the fabrication of n-type FET (Fig.…”

Electrically Reconfigurable Organic Logic Gates: A Promising Perspective on a Dual‐Gate Antiambipolar Transistor

“…"So far, several types of emerging reconfigurable devices have been proposed, such as multiple gate transistors, ambipolar transistors, optically controllable transistors, and nonvolatile memory devices, which include resistive memory-based FPGAs and ferroelectric gate transistors. [21][22][23][24][25][26][27] However, in most cases, these devices are basically constructed with the current complementary metal-oxide-semiconductor (CMOS) architecture. [16,26,27] Thus, the device configurations make these logic circuits complex.…”

Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning

“…These two challenges are major obstacles for the industrial applications of 2D-based nanoelectronics and, being independent from each other, need to be separately addressed. There has been recent progress regarding the formation of low-barrier contacts for 2D semiconductors using contact gating 10 or semimetallic bismuth contacts to achieve ultralow contact resistances 11 . However, the need to find a suitable insulator with a minimum number of electrically active traps remains.…”