2003
DOI: 10.1063/1.1572196
|View full text |Cite
|
Sign up to set email alerts
|

Double modulated thermoreflectance microscopy of semiconductor devices

Abstract: Photothermal microscopy based on combined optical and electrical excitation has been applied to insulating lines and conducting channels on SIMOX mesas prepared by focused ion beam implantation. The double excitation technique permits imaging of electrical properties of the implanted structures yielding complementary information achievable by a single excitation defect tracing. In addition, the contrast of the images of implanted structures can be increased considerably. The best contrast for the observation o… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2

Citation Types

0
2
0

Year Published

2004
2004
2019
2019

Publication Types

Select...
6

Relationship

0
6

Authors

Journals

citations
Cited by 9 publications
(2 citation statements)
references
References 12 publications
0
2
0
Order By: Relevance
“…Geiler et al 25 used double laser beams with different wave lengths in order to generate the differential frequency in the sample by photothermal modulation of the refractive index. In this context, Dietzel et al 26 developed the double modulated thermoreflectance microscopy of semi-conductor devices based on combined optical and electrical excitation. However, in these latter works, the problem of a semi-infinite layer has been studied extensively, and those with a finite layer do not offer analytical solutions.…”
Section: Introductionmentioning
confidence: 99%
“…Geiler et al 25 used double laser beams with different wave lengths in order to generate the differential frequency in the sample by photothermal modulation of the refractive index. In this context, Dietzel et al 26 developed the double modulated thermoreflectance microscopy of semi-conductor devices based on combined optical and electrical excitation. However, in these latter works, the problem of a semi-infinite layer has been studied extensively, and those with a finite layer do not offer analytical solutions.…”
Section: Introductionmentioning
confidence: 99%
“…[6][7][8][9][10][11] Due to the merits of noncontact and nondestructive behavior, these methods are widely used as a detection way in microelectromechanical system ͑MEMS͒ and nanoelectromechanical system, especially in situations where other techniques are not useful. [13][14][15][16][17][18][19][20][21] For semiconductor materials plasma waves, generated by the absorbed intensity-modulated laser beam, can play the dominant role in the PA and PT experiments. A lot of excellent works have been done both in experimental and in theoretical fields.…”
Section: Introductionmentioning
confidence: 99%