2023
DOI: 10.1109/access.2023.3310570
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Double Node Upset Immune RHBD-14T SRAM Cell for Space and Satellite Applications

Pavan Kumar Mukku,
Rohit Lorenzo

Abstract: Deep sub-micron memory devices play a crucial role in space electronic applications due to their susceptibility to single-event upset and double-node upset types of soft errors. When a charged particle from space hit a scaled memory circuit, the critical charge of sensitive storage nodes drops, and a node upset happens across the storage nodes. This paper describes the soft error immune RHBD-14T SRAM cell (SEI-14T) for space and satellite applications. The SEI-14T memory cell consists of two latch circuits cou… Show more

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Cited by 5 publications
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