Abstract:In this article, the recently revived impedance transformer, implemented as broad side coupled microstrip structure, is used to realize a double octave wideband power amplifier covering the L-and S-band. Several parameters of the transformer, such as distance to a ground plane or permittivity of the dielectric surrounding the transformer are analyzed. The manufactured amplifier, using a commercial GaN HEMT transistor, achieved a continuous wave output power of 45 to 47 dBm and drain efficiency of 42 to 49 perc… Show more
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