Double-side pixelated X-ray detector based on metamorphic InGaAs/InAlAs quantum well

Abstract

Due to the high atomic number, low band gap and high electron mobility of III-IV semiconductors, the use of metamorphic InGaAs/InAlAs quantum well-based devices was proposed for fast pixelated photon detectors. In this work, we are presenting a double side-segmented quantum well (QW) device, discussing its spatial resolution and analysing the crosstalk between pixels. The fabricated devices were tested with needle-shaped beams of synchrotron radiation with different energies and spot sizes. The position of the synchrotron radiation was estimated with a 1.3-µm precision. The charge spread in the material and related crosstalk function between pixels were extracted from the position estimation measurements of the photon beams. The results show that the cross-talk between pixels is actually responsible for the different resolutions obtained, regardless of the experimental conditions, pointing out the importance of the geometry of the fabricated devices. Furthermore, it has been observed that the QW pixelation is mandatory for hybrid detector technology.

Low-Temperature Growth of InGaAs Quantum Wells Using Migration-Enhanced Epitaxy

“…InGaAs quantum wells (QWs) epitaxially grown on InP are an excellent optoelectronic material, which can be used to manufacture infrared photodetectors, lasers, high-speed transistors, and other optoelectronic devices widely used in optical communications, medical devices, and LiDAR [1][2][3][4][5]. In addition, with the development of THz technology, THz photoconductive antenna (PCA) prepared with low-temperature-grown InGaAs can be applied in the fields of security detection, material analysis, and medical imaging [6][7][8][9][10][11].…”

Correlation between Optical Localization-State and Electrical Deep-Level State in In0.52Al0.48As/In0.53Ga0.47As Quantum Well Structure

“…For instance, the high electron-mobility transistors [1][2][3][4] and the spin field-effect transistors [5] are feasible electronic devices that could be demonstrated on InAlAs/InGaAs heterostructures. In addition, the infrared photodetectors [6][7][8][9], X-ray detectors [10], terahertz (THz) quantumcascade lasers [11,12], mid-infrared quantum-cascade lasers [13,14], and electro-optical modulators [15] are also typical examples that can open up a broad avenue toward the tangible optoelectronic applications of the InAlAs/InGaAs quantum well (QW) structures. When growing the epitaxial heterostructure, in general, both the alloy disorder and the layer-thickness fluctuation are inevitable because of the lattice mismatch in between the ultrathin heterojunction layers.…”