Typically, the optical
applications of silicon (Si) are limited
to wavelengths below ∼1100 nm. However, there is significant
research on Si surface modification, which tries to extend the optical
properties of Si further into the infrared (IR) region. In this work,
we present an ultra-wideband complementary metal–oxide–semiconductor
(CMOS)-biocompatible Si-based optical absorber with a hydrophobic
surface. It consists of patterned three-dimensional grid-like structures
of optimized compounds of titanium (Ti) on n-type Si (n-Si). Here,
the Ti-compounds on Si were formed by subsequent deposition of patterned
Ti and annealing. Moreover, we have shown that there are two possible
Ti-compounds formed on Si, depending on the thickness of Ti deposited
and the annealing time. The composition and the corresponding absorbance
spectra for the two possibilities of Ti-compounds on n-Si, that is,
Ti–O/Ti–O–Si/Ti–Si/n-Si (type 1) and Ti–O/Ti–O–Si/n-Si
(type 2), were confirmed using an X-ray photoelectron spectroscopy
depth profiler and ultraviolet–visible–near-infrared
spectrometer. We also illustrate how type 1 improves the absorption
of radiation in the IR region. Further, we experimentally demonstrate
that our fabricated absorber has an average reflectance (R) of <25% and an average absorbance of approximately 60% for wavelengths
ranging from 200 to 3300 nm. The average % R for
wavelengths from 400 to 1500 nm is <10%. The surface hydrophobicity
for the fabricated absorbers was confirmed using a water contact angle
(WCA) measurement system with WCAs >100°, which makes the
surface
hydrophobic.