Double Sided Diffusion and Drift of Lithium Ions on Large Volume Silicon Detector Structure

Muminov, R. A.; Saymbetov, Ahmet; Japashov, Nursultan; Mansurova, A. A.; Radzhapov, S. A.; Toshmurodov, Yo. K.; Mukhametkali, B. K.; Sissenov, N. K.; Kuttybay, Nurzhigit

doi:10.5573/jsts.2017.17.5.591

Cited by 6 publications

(6 citation statements)

References 5 publications

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“…The processes of diffusion and drift of lithium ions into silicon mono-crystals are the most time-consuming and the most important in all steps of detector fabrication. Therefore, these processes have been attracting the attention of researchers for a long time [12].…”

Section: Introductionmentioning

confidence: 99%

Optimal regime of the double-sided drift of lithium ions into silicon monocrystal

Saymbetov¹,

Muminov²,

Japashov³

et al. 2023

phst

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In this work, we show a new method for obtaining silicon-lithium semiconductor structures using the bilateral drift of lithium particles into silicon mono-crystal in order to create nuclear radiation detectors with a wide bandgap. This method describes the simultaneous distribution of lithium ions on surfaces of cylindrical silicon crystals, which speeds up the process of obtaining the required detector structure. Here in this work, we aimed to identify the most optimal regimes of the electric field applied in the process of bilateral ion drift, as well as to investigate the effect of the thermal factors to create a drift of lithium ions. We can estimate these optimal regimes of voltage and temperature by making theoretical assumptions based on the numerical method for solving the Poisson continuity equation, the calculations of Pell and Louber. At the same time, simplifications were made to neglect the internal interaction of particles. The paper shows the results of modeling the process of bilateral drift under the influence of a stepwise increase in temperature and reverse voltage. This bilateral drift procedure facilitates the fabrication of silicon-lithium nuclear radiation detectors with large diameters and sensitive areas.

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Section: Introductionmentioning

confidence: 99%

Optimal regime of the double-sided drift of lithium ions into silicon monocrystal

Saymbetov¹,

Muminov²,

Japashov³

et al. 2023

phst

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“…As disadvantages of the p–i–n detectors, the authors mentioned the following characteristics: domain energy resolutions of p–i–n detectors are at low energies therefore they need a high gain preamplifier system relatively poor timing resolution and problems related to accepting high counting rate. A number of these problems were solved by some groups of authors, for instance, Muminov et al 15 , 16 proposed a unique technology for the fabrication of large-sized Si(Li) p–i–n detectors with help of double-sided diffusion and drift of Li ions into monocrystalline silicon. Applying this technology authors could obtain large-sized Si(Li) p–i–n detectors, where they could increase the counting rate of the detector due to its size and did increase its efficiency due to the uniform distribution of Li ions in the i- region.…”

Section: Introductionmentioning

confidence: 99%

“…In our recent papers 15 , 33 , we proposed a new method of obtaining large-sized Si(Li) p–i–n detectors and investigated the physical processes during the formation of the i-region. In order to deeply explain the processes of the newly obtained detector here, in the current work, we proposed modeling and designing a signal formation procedure in these detectors using the classical Shockley equation for silicon semiconductors and a system of telegraph equations.…”

Section: Introductionmentioning

confidence: 99%

Equivalent circuit of a silicon–lithium p–i–n nuclear radiation detector

Saymbetov

Muminov

Zhang

et al. 2023

Sci Rep

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Nuclear radiation detectors are indispensable for research in the field of nuclear radiation, X-ray spectroscopy and other areas. Interest in silicon p–i–n detectors of nuclear radiation is increasing today due to the possibility of their operation under normal conditions. In this paper, an equivalent circuit of a silicon–lithium p–i–n nuclear radiation detector is proposed. The proposed circuit is obtained using the classical Shockley equation for silicon semiconductors and the telegraph equations. The parameters of the equivalent circuit were determined using the multiple regression method. As a result of simulation of the model in the MATLAB Simulink graphical development environment, the amplitude-frequency and phase-frequency characteristics of the proposed model were obtained. Using the Monte Carlo method, the alpha-decay of the uranium isotope $${}_{92}{}^{233}\mathrm{U}$$ 92 233 U , thorium isotope $${}_{90}{}^{227}\mathrm{Th}$$ 90 227 Th and americium isotope $${}_{95}{}^{241}\mathrm{Am}$$ 95 241 Am the alpha-decay spectrum was obtained. Obtained alpha-decay spectra coincides with the experimental data, presented in previous works of other authors.

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“…Previously, in [ 22 ], our research group briefly reported the experimental results of manufacturing large-sized Si(Li) detector structures with a new method of double-sided diffusion and drift of lithium-ions into monocrystalline silicon. In this paper, we describe the manufacturing procedure of large-sized Si(Li) p-i-n detectors in detail, with optimal regimes of experimental technique and theoretical assumptions of the formulation of p-i-n regions in large-sized monocrystalline silicon obtained by the double-sided method.…”

Section: Introductionmentioning

confidence: 99%

Physical Processes during the Formation of Silicon-Lithium p-i-n Structures Using Double-Sided Diffusion and Drift Methods

et al. 2021

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In this paper, we described a method of double-sided diffusion and drift of lithium-ions into monocrystalline silicon for the formation of the large-sized, p-i-n structured Si(Li) radiation detectors. The p-i-n structure is a p-n junction with a doped region, where the “i-region” is between the n and the p layers. A well-defined i-region is usually associated with p or n layers with high resistivities. The p-i-n structure is mostly used in diodes and in some types of semiconductor radiation detectors. The uniqueness of this method is that, in this method, the processes of diffusion and drift of lithium-ions, which are the main processes in the formation of Si(Li) p-i-n structures, are produced from both flat sides of cylindrical-shaped monocrystalline silicon, at optimal temperature (T = 420 °C) conditions of diffusion, and subsequently, with synchronous supply of temperature (from 55 to 100 °C) and reverse bias voltage (from 70 to 300 V) during drift of lithium-ions into silicon. Thus, shortening the manufacturing time of the detector and providing a more uniform distribution of lithium-ions in the crystal volume. Since, at present, the development of manufacturing of large-sized Si(Li) detectors is hindered due to difficulties in obtaining a uniformly compensated large area and time-consuming manufacturing process, the proposed method may open up new possibilities in detector manufacturing.

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Double Sided Diffusion and Drift of Lithium Ions on Large Volume Silicon Detector Structure

Cited by 6 publications

References 5 publications

Optimal regime of the double-sided drift of lithium ions into silicon monocrystal

Optimal regime of the double-sided drift of lithium ions into silicon monocrystal

Equivalent circuit of a silicon–lithium p–i–n nuclear radiation detector

Physical Processes during the Formation of Silicon-Lithium p-i-n Structures Using Double-Sided Diffusion and Drift Methods

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