Fluorination of graphene is one of the most effective methods to improve the corrosion protection of graphene coatings. In this paper, the diffusion and penetration behaviors of O atoms on fully fluorinated graphene (CF) and partially fluorinated graphene (C<sub>4</sub>F) were investigated using the NEB transition state search method. The effects of F atoms on the corrosion resistance of fluorinated graphene films were analyzed either. The results show that the adsorption of F atoms can effectively inhibit the diffusion of O atoms on graphene. On C<sub>4</sub>F, the F atoms are distributed in a para-top position, which greatly increases the surface diffusion energy barrier of O atoms. Moreover, it is difficult for the adsorbed O atoms to diffuse to different sp<sup>2</sup> C rings through the obstruction of F atoms. The energy barrier of the horizontal diffusion of O atoms even reaches 2.69 eV in CF. And with the increase of F atoms, the stable structure of graphene is gradually destroyed, the barrier ability of C-atom layer for penetration behaviors of O atoms is greatly reduced. Furthermore, the interfacial adhesion work of pure graphene, CF and C<sub>4</sub>F films with Cu(111) surfaces were calculated, as well as the electronic structures of the composite interface using first-principles calculations. The interfacial adhesion work of the Cu/G, Cu/C4F and Cu/CF interfaces are 2.626J/m<sup>2</sup>、3.529J/m<sup>2</sup>and 3.559J/m<sup>2</sup>, respectively. The calculations show that the bonding of C<sub>4</sub>F and C<sub>4</sub>F with Cu substrate are more strong than pure graphene with Cu substrate, and the interfacial adhesion work increase with increasing of F atom adsorption concentration. The calculation of the density of states also conform stronger interaction between Cu and C atoms of the Cu/C4F interface than that of the Cu/CF interface. Bader charge analysis show increased charge transfer at both the Cu/C4F and Cu/CF interfaces comparing with the Cu/G interface, and Cu/C<sub>4</sub>F interface has more charge transfer, in which Cu-C bonds are formed.