Double wavelength selective GaAs/AlGaAs infrared detector device

Köck, A.; Gornik, E.; Abstreiter, G.; Böhm, G.; Walther, M.; Weimann, G.

doi:10.1063/1.107127

Cited by 74 publications

(20 citation statements)

References 12 publications

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“…[5][6][7] In particular, metallic gratings have been studied for use with quantum well infrared photodetectors (QWIP) to manipulate the polarization of incoming radiation. These designs, often with large periods 5 and hole filling fractions, are designed to overcome the inability of QWIPs to absorb normally incident light, 8 and do not make use of the rich near field effects and physics associated with localized surface plasmons.…”

Section: Introductionmentioning

confidence: 99%

Extraordinary plasmon-QD interaction for enhanced infrared absorption

et al. 2013

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The use of metallic nanostructures for enhanced transmission and near field phenomena have been a topic of extensive research. Here we present integration of active media, consisting of InAs quantum dots (QD) embedded in quantum wells, with 2 dimensional metallic hole arrays (2DHA) leading to a strong interaction between resonant surface plasmons, excited at the metal-semiconductor interface, and intersubband transitions of quantum dots. The presence of a low-loss absorber within the enhanced near field region of 2DHA leads to an enhancement of photoresponse. The parameters of 2DHA were designed to overlap with absorption peaks of QDs. We present techniques of fabrication, accurate characterization of enhancement and efforts to optimize the 2DHA-QD coupling. Over an order of magnitude enhancement in photoresponse is observed due to spectral matching of intersubband absorption of quantum dots to that of 2DHA resonance, optimal placement of QD within the structure, and improved interaction lengths due to lateral propagation. This enhancement is also accompanied by significant narrowing of linewidth and the ability to tune the resonance by varying the 2DHA parameters. A hexagonal lattice with periodic circular holes on a thin gold film is used as the 2DHA. With further optimizations, these structures have significant applications in the mid-wave infrared (3-5 µm) and long-wave infrared (8-12 µm) regions for multispectral and polarization sensitive sensing.

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Section: Introductionmentioning

confidence: 99%

Extraordinary plasmon-QD interaction for enhanced infrared absorption

et al. 2013

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“…The simple structure with stacked together multiple quantum wells was utilized in initial studies. In this design, each QW is used for one specific frequency [11]. However, difficulties in coupling of incident light to a set of QWs put significant limitations on realization of multispectral detection with a two-dimensional detector array [13].…”

Section: Introductionmentioning

confidence: 99%

“…These unique features are favorable for multicolor detection, which is crucial for numerous applications including advanced imaging, sensing, and object discrimination and identification [7][8][9]. Various approaches were proposed and studied to develop QWIPs for multispectral detection [10][11][12]. The simple structure with stacked together multiple quantum wells was utilized in initial studies.…”

Section: Introductionmentioning

confidence: 99%

Bias-tunable IR photodetector based on asymmetrically doped GaAs/AlGaAs double-quantum-well nanomaterial for remote temperature sensing

et al. 2016

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We designed, fabricated, and characterized multi-color IR photodetectors with asymmetrical doping of GaAs/AlGaAs double quantum wells (DQW). We measured and analyzed spectral and noise characteristics to evaluate feasibility of these photodetectors for remote temperature sensing at liquid nitrogen temperatures. The bias voltage controls the charge distribution between the two wells in a DQW unit and provides effective tuning of IR induced electron transitions. We have found that the responsivity of our devices is symmetrical and weakly dependent on the bias voltage because the doping asymmetry compensates the effect of dopant migration in the growth direction. At the same time, the asymmetrical doping strongly enhances the selectivity and tunability of spectral characteristics by bias voltage. Multicolor detection of our QWIP is realized by varying the bias voltage. Maximum detection wavelength moves from 7.5 µm to 11.1 µm by switching applied bias from -5 V to 4 V. Modeling shows significant dependence of the photocurrent ratio on the object temperature regardless of its emissivity and geometrical factors. We also experimentally investigated the feasibility of our devices for remote temperature sensing by measuring the photocurrent as a response to blackbody radiation with the temperature from 300 o C to 1000 o C in the range of bias voltages from -5 V to 5 V. The agreement between modelling and experimental results demonstrates that our QWIP based on asymmetrically doped GaAs/AlGaAs DQW nanomaterial is capable of remote temperature sensing. By optimizing the physical design and varying the doping level of quantum wells, we can generalize this approach to higher temperature measurements. In addition, continuous variation of bias voltage provides fast collection of large amounts of photocurrent data at various biases and improves the accuracy of remote temperature measurements via appropriate algorithm of signal processing.

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“…Further, for a single band system, either the emissivity or the temperature of the target can be determined; in a dual-band system, both can be determined, provided that the emissivity does not vary much with wavelength. As a consequence, many groups [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15] have made dual band detectors and FPAS. Essentially the detectors corresponding to the two bands are either placed side-by-side [1,12] or stacked, one on top of the other [2-11, 13-151.…”

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confidence: 99%

Proposed two-color HgCdTe focal plane array

Dhar

Gopal

2001

Materials for Infrared Detectors

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Recently there has been considerable interest in two-color focal plane arrays (FPAs), particularly in mercury cadmium telluride (MCT,Hg 1Cd STe). Single-color FPAS provide only the signal from the target, not its emissivity and temperature separately. The schemes that have been implemented for two-color FPAS involve two bumps per pixel, and two back-to-back diodes in four different layers, which are technologically challenging. We propose a simple scheme that requires only one bump per pixel, in a material that is not a heterostructure, and can be grown by liquid phase or molecular beam epitaxy. The two different cutoff wavelengths are obtained by implanting two differentjunction depths in a nt-on-p configuration. Since the n layer does not contribute, because of the Moss-Burstein shift, the different diodes correspond to different surface composition values, and x,2, in the graded p-type epilayer. The precise cutoff wavelengths can be chosen by appropriate slope s of the composition in the epilayer. For the purpose of radiometry it is not necessary that the two cutoff wavelengths should differ by large amounts: even 0.3 im is sufficient -easily achievable, with reasonable junction depths ( 3 tm). The two colors could form a checkerboard pattern across the FPA. However, other patterns may be used: e.g. the central pixels could be of one color, and the remaining in the other color; or patches of detectors of either one or the other color could be fabricated. The advantage of keeping the difference in cutoff wavelengths small would be that if one should so desire the FPA could just as well be used as for normal imaging purposes.Recently there has been considerable interest in two-color infrared (IR) focal plane arrays (FPAs). Thermal imaging systems that are capable of detection in two bands are advantageous for military applications such as signature recognition, decoy identification, and counter-measure avoidance. They provide an added dimension of contrast as compared to single-band imaging. Further, for a single band system, either the emissivity or the temperature of the target can be determined; in a dual-band system, both can be determined, provided that the emissivity does not vary much with wavelength. As a consequence, many groups [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15] have made dual band detectors and FPAS. Essentially the detectors corresponding to the two bands are either placed side-by-side [1,12] or stacked, one on top of the other [2-11, 13-151. The earliest FPAS were bias-switchable [2] between one band and the other, and later ones allowed either sequential or simultaneous viewing in the two bands [3,4], while many recent FPAS allow independent access to both bands [5][6][7][8][9], either by triple-or quadruple-layer devices. However, the penalty for simultaneous viewing in both bands is that two indium bumps must be connected per pixel. While this has been demonstrated [3-9], it certainly adds complexity to the process of fabrication.In this paper, we propose a simple two-color FPA, ...

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Double wavelength selective GaAs/AlGaAs infrared detector device

Abstract: Articles you may be interested inEffects of bias and temperature on the intersubband absorption in very long wavelength GaAs/AlGaAs quantum well infrared photodetectors

Cited by 74 publications

References 12 publications

Extraordinary plasmon-QD interaction for enhanced infrared absorption

Extraordinary plasmon-QD interaction for enhanced infrared absorption

Bias-tunable IR photodetector based on asymmetrically doped GaAs/AlGaAs double-quantum-well nanomaterial for remote temperature sensing

Proposed two-color HgCdTe focal plane array

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