Double δ-Doped Enhancement-Mode InGaP/AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor for Linearity Application

Abstract

A high linearity and high efficiency enhancement-mode InGaP/AlGaAs/InGaAs pseudomorphic high electron mobility transistor (PHEMT) for single supply operation has been developed. The low voltage operation is achieved by the very low knee voltage of the device and the linearity is improved by the optimizing concentrations of the two δ-doped layers. Biased at drain-to-source voltage VDS = 2 V, the fabricated 0.5 ×200 µm2 device exhibited a maximum transconductance of 448 mS/mm. The measured minimum noise figure (NFmin) was 0.86 dB with 12.21 dB associated gain at 10 GHz. The device shows a high output third-order intercept point (OIP3)-P1 dB of 13.2 dB and a high power efficiency of 35% when under wideband code-division multiple-access (W-CDMA) modulation signal.

Electron Subband Structure and Mobility Trends in P-N Delta-Doped Quantum Wells in Si

“…Recently, the delta-doping has been used as a backbone technique to improve important characteristics, such as the linearity, in field effect transistor devices for application in millimeter-wave integrated circuits (MMIC) and wireless components [1][2][3][4][5][6][7]. The better performance of the mentioned devices relies on an improvement in the transport properties via optimization of the coupling between the delta layers and the heterostructure region.…”