Doubly triggered conductance across thin zinc oxysulfide films

Abstract

Chemically resolved electrical measurements (CREM) of zinc oxysulfide (ZnOS) over-layers on gold show very poor conductance under either electrical or optical input signals, whereas simultaneous application of the two yields extremely high sample currents. The effect and its dependence on wavelength and electrical parameters is explained by the in-situ derived band diagram, in which a buffer level of charge traps cannot contribute directly to conductance, however amplifies the photoconductance by orders of magnitudes under sub-bandgap illumination. This AND-type doubly-triggered response proposes interesting applications and an answer to problems encountered in related optoelectronic devices. _____________________________

Practical Enhancements in Current Density and Power Generation of Bifacial Semitransparent Ultrathin CIGSe Solar Cells via Utilization of Wide Bandgap Zn‐Based Buffer

“…[ 43 , 44 , 45 ] In addition, Zn(O,S) also have several defect related uncertainty issues. [ 46 , 47 , 48 ] Moreover, defects at the buffer/CIGSe interface in the form of sodium compounds and oxides can be formed during the NaF post‐deposition treatment (PDT) and air exposure prior to buffer deposition [ 49 ] and may increase carrier recombination by trapping charges. In the conventional CIGSe solar cell process, the wet chemical bath deposition (CBD) process for CdS buffer is known to clean the surface by removing impurities such as Na 2 CO 3 , In 2 O 3 , and Ga 2 O 3 , [ 50 ] while the ALD process for Zn(O,S) buffer cannot effectively provide etching.…”