Trans. Electr. Electron. Mater.
 2024
DOI: 10.1007/s42341-024-00511-w
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Drain Current Characteristics of 6 H-SiC MESFET with Un-Doped and Recessed Area under the Gate: A Simulation Study

Pydimarri Padmaja,
Radhamma Erigela,
D. Venkatarami Reddy
et al.
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