Drain Current Response to Fast Illumination Pulse for Amorphous In–Ga–Zn-O Thin-Film Transistors

Tai, Ya‐Hsiang; Chang, Chin-Liang; Chan, Po-Chun; Dai, Jhih-Jie

doi:10.1109/ted.2016.2615883

Cited by 5 publications

(3 citation statements)

References 19 publications

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“…We found the number of reacting V O was dependent on the light intensity. Moreover, the strong correlation between the characteristic time constant Tau and stress time hints the diversity of the reaction rate can be correspondingly observed by the experiments in the time of interest [22], [23]. In each experiment, measurement time is fixed, and Vth reflects only a part of V O in vacancy pool.…”

Section: A Proposing a Vacancy Pool Modelmentioning

confidence: 99%

The Vacancy Pool Model for Amorphous In-Ga-Zn-O Thin-Film Transistors

Tai

Liu

Chan

2019

IEEE J. Electron Devices Soc.

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In this paper, the reaction rate of oxygen vacancy (V O ) by the derivatives of threshold voltage (Vth) in the amorphous indium-gallium-zinc oxide thin-film transistors under light pulses with altering duty ratios is investigated. More importantly, after collecting and analyzing a lot of experimental results, a comprehensive model named V O pool is proposed. The proposed model can more universally describe the characteristic of V O reacting to the light and its degradation behavior under various kinds of stress condition.INDEX TERMS Amorphous indium gallium zinc oxide (a-IGZO), thin-film transistors (TFTs), reaction rate, illumination effect, multiple-pulse illumination, response time, oxygen vacancy.

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Section: A Proposing a Vacancy Pool Modelmentioning

confidence: 99%

The Vacancy Pool Model for Amorphous In-Ga-Zn-O Thin-Film Transistors

Tai

Liu

Chan

2019

IEEE J. Electron Devices Soc.

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“…On the other hand, for those experiments with short periods of time, the drain current increase gradually approaches a linear increasing trend. For further analysis, the excited behavior of I D can be expressed by [19]:…”

Section: The Excited Behaviormentioning

confidence: 99%

The time response for the low-temperature poly-silicon thin-film transistors to x-ray irradiation pulse

Tai¹,

Yeh²,

Chen³

et al. 2021

Semicond. Sci. Technol.

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In this study, the time response behavior of low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) to x-ray irradiation pulses with different frequencies is analyzed. The formulas for the time response of excited and recovery behaviors are proposed for possible use in circuit performance enhancement in real x-ray irradiation situations. The predicted and measured results fit fairly well, which is important in the development of x-ray image sensors using LTPS TFTs.

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“…Using the same process, the a-IGZO TFTs as switches and light sensors can be monolithically fabricated on the same substrate in the display panel. However, the time response of drain current in conventional a-IGZO TFT under illumination is in the stretched-exponential formula, which limit a-IGZO to be a high sensitivity image sensor due to the slow response time [6][7][8][9]. Therefore, increasing the photosensitivity is a primary issue to solve.…”

Section: Introductionmentioning

confidence: 99%