Drain-Induced Barrier Lowering and Parasitic Resistance Induced Instabilities in Short-Channel InSnZnO TFTs

Raja, Jayapal; Jang, Kyungsoo; Nguyen, Cam Phu Thi; Balaji, Nagarajan; Chatterjee, Somenath; Yi, Junsin

doi:10.1109/led.2014.2318754

Cited by 42 publications

(11 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…To explain the slight negative shifts in transfer cures for the devices using OA gate stacks, the drain-induced barrier lowering (DIBL) can be suggested as one of the feasible origins, which typically appears in short-channel devices due to the extensions of depletion area with increasing the drain bias during the device operations. , In other words, the energy barrier can be more readily lowered by increasing the drain bias for the device with a shorter channel length, causing a negative shift in turn-on voltage ( V on ). SI Figure S7 compares the values of DIBL coefficient among the devices AOA, BOA, and COA as a function of a channel length, in which the DIBL coefficients of each device were estimated to be 22, 244, and 311 mV/V, respectively, when the channel length was reduced to 500 nm.…”

Section: Resultsmentioning

confidence: 99%

Roles of Oxygen Interstitial Defects in Atomic-Layer Deposited InGaZnO Thin Films with Controlling the Cationic Compositions and Gate-Stack Processes for the Devices with Subμm Channel Lengths

Bae

Yang

Kim

et al. 2022

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

Roles of oxygen interstitial defects located in the In–Ga–Zn-O (IGZO) thin films prepared by atomic layer deposition were investigated with controlling the cationic compositions and gate-stack process conditions. It was found from the spectroscopic ellipsometry analysis that the excess oxygens increased with increasing the In contents within the IGZO channels. While the device using the IGZO channel with an In/Ga ratio of 0.2 did not show marked differences with the variations in the oxidant types during the gate-stack formation, the device characteristics were severely deteriorated with increasing the In/Ga ratio to 1.4, when the Al2O3 gate insulator (GI) was prepared with the H2O oxidants (H2O–Al2O3) due to a higher amount of excess oxygen in the channel. Additionally, during the deposition process of the Al-doped ZnO (AZO) gate electrode (GE) replacing from the indium–tin oxide (ITO) GE, the thermal annealing effect at 180 °C facilitated the passivation of oxygen vacancy and the strengthening of metal–oxygen bonding, which could stabilize the TFT operations. From these results, the gate-stack structure employing O3-processed Al2O3 GI (O3–Al2O3) and AZO GE (OA) was suggested to be most suitable for the device using IGZO channel with a higher In content. On the other hand, the device employing H2O–Al2O3 GI and AZO GE exhibited larger negative shifts of threshold voltage (V TH) under positive-bias-temperature stress (PBTS) condition than the device employing O3– Al2O3 GI and ITO GE due to larger hydrogen contents within the gate stacks. Anomalous negative shifts of V TH were accelerated with increasing the In contents of the IGZO channel. When the channel length of the fabricated device were scaled down to submicrometer regime, the OA gate stacks successfully alleviated the short-channel effects.

show abstract

Section: Resultsmentioning

confidence: 99%

Roles of Oxygen Interstitial Defects in Atomic-Layer Deposited InGaZnO Thin Films with Controlling the Cationic Compositions and Gate-Stack Processes for the Devices with Subμm Channel Lengths

Bae

Yang

Kim

et al. 2022

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

show abstract

“…Most of the ternary/quaternary oxide materials are amorphous in nature, which can be beneficial for fabricating high performance TFTs. The a-ZnSnO, a-InZnO, a-HfInZnO, a-GaInZnO, a-InSnZnO, and a-GaZnSnO are the most prominent ternary/multi component materials for TFT applications [9,[23][24][25][26][27][28][29][30][31][32]. All of these materials exhibit n-type conductivity due to the existence of intrinsic donors.…”

Section: Semiconductor Materials (Binary Ternary and Multi-component)mentioning

confidence: 99%

Improvement of Mobility in Oxide-Based Thin Film Transistors: A Brief Review

Raja¹,

Jang²,

Nguyen³

et al. 2015

Transactions on Electrical and Electronic Materials

View full text Add to dashboard Cite

Amorphous oxide-based thin-film transistors (TFTs) have drawn a lot of attention recently for the next-generation high-resolution display industry. The required field-effect mobility of oxide-based TFTs has been increasing rapidly to meet the demands of the high-resolution, large panel size and 3D displays in the market. In this regard, the current status and major trends in the high mobility oxide-based TFTs are briefly reviewed. The various approaches, including the use of semiconductor, dielectric, electrode materials and the corresponding device structures for realizing high mobility oxide-based TFT devices are discussed.

show abstract

“…As Moore's law predicted, the number of transistors in integrated circuits doubled every 2 years [9,10]. However, as the scaling has continued, MOSFETs faced limitations such as short channel effect and drain-induced barrier lowering that significantly affected their performances [11,12]. The scaling process has reduced gate control, leading to higher leakage currents and exponentially higher static power consumption.…”

Section: Introductionmentioning

confidence: 99%

“…The scaling process has reduced gate control, leading to higher leakage currents and exponentially higher static power consumption. This problem has also limited the hardware implementation of bio-inspired and neuromorphic computing systems using CMOS technology [6,[11][12][13].…”

Section: Introductionmentioning

confidence: 99%

A high‐capacity and nonvolatile spintronic associative memory hardware accelerator

Rezaei

Amirany

Moaiyeri

et al. 2023

IET Circuits, Devices & Syst

View full text Add to dashboard Cite

Significant progress has been made in manufacturing emerging technologies in recent years. This progress implemented in-memory-computing and neural networks, one of today's hottest research topics. Over time, the need to process complex tasks has increased. This need causes the emergence of intelligent processors. A nonvolatile associative memory based on spintronic synapses utilising magnetic tunnel junction (MTJ) and carbon nanotube field-effect transistors (CNTFET)-based neurons is proposed. The proposed design uses the MTJ device because of its fascinating features, such as reliable reconfiguration and nonvolatility. At the same time, CNTFET has overcome conventional complementary metal-oxide-semiconductor shortcomings like the short channel effect, drain-induced barrier lowering, and poor hole mobility. The proposed design is simulated in the presence of process variations. The proposed design aims to increase the number of weights generated in the synapse for higher memory capacity and accuracy. The effect of different tunnel magnetoresistance (TMR) values (100%, 200%, and 300%) on the performance and accuracy of the proposed design has also been investigated. This investigation shows that the proposed design performs well even with a low TMR value, which is very important and remarkable from the fabrication point of view.

show abstract

Drain-Induced Barrier Lowering and Parasitic Resistance Induced Instabilities in Short-Channel InSnZnO TFTs

Cited by 42 publications

References 19 publications

Roles of Oxygen Interstitial Defects in Atomic-Layer Deposited InGaZnO Thin Films with Controlling the Cationic Compositions and Gate-Stack Processes for the Devices with Subμm Channel Lengths

Roles of Oxygen Interstitial Defects in Atomic-Layer Deposited InGaZnO Thin Films with Controlling the Cationic Compositions and Gate-Stack Processes for the Devices with Subμm Channel Lengths

Improvement of Mobility in Oxide-Based Thin Film Transistors: A Brief Review

A high‐capacity and nonvolatile spintronic associative memory hardware accelerator

Contact Info

Product

Resources

About