Proceedings of the 25th Edition on Great Lakes Symposium on VLSI 2015
DOI: 10.1145/2742060.2742069
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DRAM based Intrinsic Physical Unclonable Functions for System Level Security

Abstract: Physical Unclonable Functions (PUF) are the result of random uncontrollable variables in the manufacturing process. A PUF can be used as a source of random but reliable data for applications such as generating chip identification and encryption keys. Among various types of PUFs, an intrinsic PUF is the result of a preexisting manufacturing process, does not require any additional circuitry, and is cost effective. In this paper, we introduce an intrinsic PUF based on dynamic random access memories (DRAM). DRAM … Show more

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Cited by 72 publications
(70 citation statements)
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“…SRAM PUFs have been studied extensively and are based on the startup values that SRAM cells take on after powering on a device [11], [12]. DRAM-based PUFs have so far only leveraged DRAM cells' start-up values [13], [14], or DRAM cell-decay effects [6]. In contrast, this work presents the Rowhammer PUF, which is a new type of an intrinsic, DRAMbased PUF that uses the Rowhammer effect.…”
Section: Memory-based Intrinsic Pufsmentioning
confidence: 99%
“…SRAM PUFs have been studied extensively and are based on the startup values that SRAM cells take on after powering on a device [11], [12]. DRAM-based PUFs have so far only leveraged DRAM cells' start-up values [13], [14], or DRAM cell-decay effects [6]. In contrast, this work presents the Rowhammer PUF, which is a new type of an intrinsic, DRAMbased PUF that uses the Rowhammer effect.…”
Section: Memory-based Intrinsic Pufsmentioning
confidence: 99%
“…DRAM-based PUFs are a relatively new category of memory-based PUFs, as the first relevant publications appeared in 2012 [10][11][12][13]. In particular, there are multiple categories of DRAM-based PUFs, each of which takes advantage of a different physical characteristic of the DRAM [14], such as the startup values of the DRAM cells [15,16], their retention times [17,18] and their access latency regarding both the relevant write and read operations [19,20]. In this paper, we focus rather on DRAM PUFs based on the retention times of the DRAM cells, in the presence of the row hammer effect in them.…”
Section: Introductionmentioning
confidence: 99%
“…The MRAM PUF is easily constructible and evaluable and has small requirements to the area. The DRAM PUF [15,16] relies on the capacitor in the DRAM to initialize to random values at start-up time. The DRAM PUF provides a large number of input patterns (challenges) compared with other memory-based PUF circuits such as static RAM PUFs and can be used in low-cost identification applications.…”
Section: Related Workmentioning
confidence: 99%