DRAM circuit and process technology

Kim, Dae-Hyun; Kwon, Hye-Jung; Bae, Seung-Jun

doi:10.1016/b978-0-12-820758-1.00015-7

Semiconductor Memories and Systems 2022

DOI: 10.1016/b978-0-12-820758-1.00015-7

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DRAM circuit and process technology

Dae-Hyun Kim,

Hye-Jung Kwon,

Seung-Jun Bae

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Cited by 2 publications

References 44 publications

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Design and Development of Novel Refresh Technique for Gain Cell Embedded DRAM

Shravan,

Fatima,

Sekhar

2023

SN COMPUT. SCI.

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Design and Development of Novel Refresh Technique for Gain Cell Embedded DRAM

Shravan,

Fatima,

Sekhar

2023

SN COMPUT. SCI.

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Hafnium Oxide-Based Ferroelectric Devices for In-Memory Computing: Resistive and Capacitive Approaches

Lee,

Narayan,

Kim

et al. 2024

ACS Appl. Electron. Mater.

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The integration of ferroelectric hafnium oxide (HfO 2 ) into semiconductor device structures has been a breakthrough in the development of state-of-the-art in-memory computing (IMC) technology. The high compatibility of ferroelectric HfO 2 with backend-of-the-line (BEOL) as well as conventional complementary metal-oxide-semiconductor (CMOS) process technologies enables the development of highly efficient embedded IMC applications. In this work, we consider both resistive and capacitive approaches to the realization of IMCcompatible devices using ferroelectric HfO 2 . Process optimization and device integration concepts based on ferroelectric HfO 2 are presented in this context. This Spotlight on Applications also reviews the reliability and reproducibility of HfO 2 -based ferroelectric devices. IMC architectures involving resistive systems are well established and mature. We discuss the capabilities and remarkable progress toward the integration of memristive ferroelectric HfO 2 devices in these IMC architectures. Special attention is also given to the recently emerged ferroelectric capacitor (Fe-Cap)-based memcapacitive systems, which offer low-power consumption based on their open-circuit nature. Distinguished by their nondestructive readout capability, Fe-Caps stand out from other capacitive memories that require switching memory states and refresh cycles during access operations. Finally, we compare the electrical performance of Fe-Cap devices with other memristive technologies for IMC applications. This provides insights into the potential of ferroelectric HfO 2 -based devices for the development of highly efficient and advanced IMC systems.

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DRAM circuit and process technology

Cited by 2 publications

References 44 publications

Design and Development of Novel Refresh Technique for Gain Cell Embedded DRAM

Design and Development of Novel Refresh Technique for Gain Cell Embedded DRAM

Hafnium Oxide-Based Ferroelectric Devices for In-Memory Computing: Resistive and Capacitive Approaches

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