Dramatically improved yields in molecular scale electronic devices using ultra-smooth platinum electrodes prepared by chemical mechanical polishing

Islam, M. Saif; Li, Z.; Chang, Shun-Chi; Ohlberg, Douglas A. A.; Stewart, Donald C.; Wang, S.Y.; Williams, R. Stanley

doi:10.1109/nano.2005.1500697

Cited by 2 publications

(2 citation statements)

References 9 publications

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“…The molecules are packed in a highly ordered way, with one end of the molecule electrically connected to the bottom electrode and the other end of the molecule connected to the top electrode, and this molecular component is described as a molecular switch [ 136 ]. Langmuir-Blodgett (LB) deposition is ideally suited for depositing the molecular layer for the fabrication of molecular memory devices [ 137 , 138 ]. Then, regarding the molecular memory operation, by applying a voltage between the electrodes, the conductivity of the molecules is altered, enabling data to be stored in a nonvolatile way.…”

Section: Reviewmentioning

confidence: 99%

Overview of emerging nonvolatile memory technologies

et al. 2014

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Nonvolatile memory technologies in Si-based electronics date back to the 1990s. Ferroelectric field-effect transistor (FeFET) was one of the most promising devices replacing the conventional Flash memory facing physical scaling limitations at those times. A variant of charge storage memory referred to as Flash memory is widely used in consumer electronic products such as cell phones and music players while NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. Emerging memory technologies promise new memories to store more data at less cost than the expensive-to-build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. They are being investigated and lead to the future as potential alternatives to existing memories in future computing systems. Emerging nonvolatile memory technologies such as magnetic random-access memory (MRAM), spin-transfer torque random-access memory (STT-RAM), ferroelectric random-access memory (FeRAM), phase-change memory (PCM), and resistive random-access memory (RRAM) combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the nonvolatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional (3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years. Subsequently, not an exaggeration to say that computer memory could soon earn the ultimate commercial validation for commercial scale-up and production the cheap plastic knockoff. Therefore, this review is devoted to the rapidly developing new class of memory technologies and scaling of scientific procedures based on an investigation of recent progress in advanced Flash memory devices.

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Section: Reviewmentioning

confidence: 99%

Overview of emerging nonvolatile memory technologies

et al. 2014

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“…As a result, the roughness of the metal/organic interface has a substantial influence on device performance and yield. If the roughness of the metal surface prior to LB or SAM deposition is greater than the thickness of the organic monolayer, or if the surface is so disordered as to render the homogenous growth of SAM's impossible, then device yields decrease dramatically [7,8]. Platinum (Pt) has been the material of choice for the metal leads in this architecture because of the ease of forming SAMs on its surface [9], its low intrinsic malleability, low surface diffusivity, and -most importantly -its compatibility with conventional CMOS processing.…”

Section: Introductionmentioning

confidence: 99%

Optimization of in-vacuo template-stripped Pt surfaces via UHV STM

et al. 2005

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A recently demonstrated [1] in-vacuo templatestripping process is applied to the study of platinum films stripped from ultra-flat silicon-oxide surfaces. Templatestripped (TS) Pt surfaces, prepared with a range of postdeposition annealing times prior to being stripped from the templating surface in an ultra-high vacuum (UHV) environment, are examined by UHV scanning tunneling microscopy (STM). These studies reveal that without post-deposition annealing, TS Pt surfaces are largely made up of poorly-ordered, granular nanostructures undesirable for many applications. The post-deposition annealing treatments explored in the study result in the emergence and continuous growth of large smooth crystallites. Issues with crystallite orientation relative to the TS surface and artefacts arising as a result of the epoxy used in the template-stripping process are presented and discussed in relation to optimizing the template-stripping procedure for specific applications such as self-assembled monolayer (SAM) formation for molecular electronics.

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Dramatically improved yields in molecular scale electronic devices using ultra-smooth platinum electrodes prepared by chemical mechanical polishing

Cited by 2 publications

References 9 publications

Overview of emerging nonvolatile memory technologies

Overview of emerging nonvolatile memory technologies

Optimization of in-vacuo template-stripped Pt surfaces via UHV STM

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