2013 IEEE 26th International Conference on Micro Electro Mechanical Systems (MEMS) 2013
DOI: 10.1109/memsys.2013.6474253
|View full text |Cite
|
Sign up to set email alerts
|

Drie of fused silica

Abstract: This paper reports detailed characterization results of deep reactive ion etching of fused silica with three different masking materials: single-crystal Si, negative photoresist KMPR and SU-8. With an optimized etch recipe, KMPR and SU-8 show higher effective mask selectivity, are easier to integrate and remove than Si, making them better masks for creating high-aspect ratio features. Using a KMPR mask, a high aspect ratio (8:1) etch with a 6-μm mask opening is obtained. SU-8 masks also achieve high aspect rat… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
10
0

Year Published

2013
2013
2024
2024

Publication Types

Select...
4
4

Relationship

1
7

Authors

Journals

citations
Cited by 18 publications
(10 citation statements)
references
References 6 publications
0
10
0
Order By: Relevance
“…We used a fused silica wafer, which is pure silicon dioxide for two reasons: 1) The impurities in glass may interfere with the DRIE process, so it is difficult to achieve a high aspect-ratio deep etching on a glass wafer, and 2) as the fused silica is pure silicon dioxide, it has the same ideal optical and biocompatibility characteristics as glass. 30 …”
Section: Resultsmentioning
confidence: 99%
“…We used a fused silica wafer, which is pure silicon dioxide for two reasons: 1) The impurities in glass may interfere with the DRIE process, so it is difficult to achieve a high aspect-ratio deep etching on a glass wafer, and 2) as the fused silica is pure silicon dioxide, it has the same ideal optical and biocompatibility characteristics as glass. 30 …”
Section: Resultsmentioning
confidence: 99%
“…In the case of anisotropic dry etching, the sidewall slopes are usually larger than 80° [10]. For example, for a binary grating with a period of 10 μm and etching depth of 500 nm, the sidewall slope ratio P is less than 1%.…”
Section: A Parametric Modelmentioning
confidence: 99%
“…The silica wafer is subsequently flipped and attached to a carrier for wafer thinning. Backside DRIE is used to define the resonator geometry [7]. Devices are detached from the carrier during the final release.…”
Section: Resonator Fabricationmentioning
confidence: 99%
“…Recently, capacitively transduced silica-on-silicon micro-resonators have been demonstrated, showing relatively high Qs but also a high level of insertion loss [6]. In this work, we choose piezoelectric actuation as it does not require small gaps for efficient transduction and devise a fabrication process to implement isolated silica resonators ideal for use in an all-silica platform [7]. The silica resonators in this work exhibit high Qs, low motional impedance, and good power handling capability.…”
Section: Introductionmentioning
confidence: 99%