Drift-diffusion simulation of leakage currents in unintentionally doped organic semiconductors with non-uniform interfaces

Pereira, Vilany Santana; Blawid, Stefan

doi:10.1007/s10825-018-1259-9

Cited by 4 publications

(1 citation statement)

References 33 publications

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“…These defects can significantly affect the measured J-V curves, and it is therefore important to utilize a model that can account for said defects to obtain reliable charge-transport characteristics. [20][21][22] Although a number of numerical models have been developed that can account for defects of various kind, [22][23][24][25][26][27][28][29] analytical models are easier to employ and are therefore more often used by experimentalists. It is therefore important to develop accurate analytical models that can aid in describing the situations where the semiconductor is not intrinsic.…”

Section: Introductionmentioning

confidence: 99%

Analytical description of mixed ohmic and space-charge-limited conduction in single-carrier devices

Röhr

MacKenzie

2020

Journal of Applied Physics

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While space-charge-limited current measurements are often used to characterize charge-transport in relatively intrinsic, low-mobility semiconductors, it is currently difficult to characterize lightly or heavily doped semiconductors with this method. By combining the theories describing ohmic and space-chargelimited conduction, we derive a general analytical approach to extract the charge-carrier density, the conduction-band edge and the drift components of the current density-voltage curves of a single-carrier device when the semiconductor is either undoped, lightly doped or heavily doped. The presented model covers the entire voltage range, i.e., both the low-voltage regime and the Mott-Gurney regime. We demonstrate that there is an upper limit to how doped a device must be before the current density-voltage curves are significantly affected, and we show that the background charge-carrier density must be considered to accurately model the drift component in the low-voltage regime, regardless of whether the device is doped or not. We expect that the final analytical expressions presented herein to be directly useful to experimentalists studying charge transport in novel materials and devices.

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