Drift mobility in a-Se1-xTex/Se double-layer xerographic photoreceptors

Vaezi-Nejad, S. M.; Juhasz, C.

doi:10.1016/0040-6090(87)90318-x

Cited by 21 publications

(5 citation statements)

References 7 publications

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“…Field dependence of drift mobility is not particular to amorphous semiconductors-it has also been observed in crystalline semiconductors such as ZnSe [54] and in organics such as PVK [35, 551. It is very unlikely that this behaviour is an experimental effect because firstly, as discussed in $5 3.1 and 3.2, two different experimental techniques (XTOF and TOF) provide identical results. Secondly, we have observed similar field dependency in double layer systems [36]. Thirdly, results show that the field dependence is invariant with thickness.…”

Section: S-'supporting

confidence: 76%

Electrical properties of amorphous semiconductor selenium and its alloys: I. Monolayers

Vaezi-Nejad

Juhasz

1987

Semicond. Sci. Technol.

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Various monolayer a-Se-based photoreceptor devices were fabricated by vacuum evaporation and their electrical properties were investigated. Three experimental techniques, namely xerographic time of flight (XTOF), electroded time of flight (TOF) and xerographic discharge were used to determine the drift mobility, carrier lifetime, dark decay and residual voltage. Where possible, these measurements were carried out as a function of applied field and composition, namely As-0.3 wt%, Te up to 17 wt% and Cl up to 60 ppm. The addition of As or Te alone reduced both hole and electron drift mobilities and increased the carrier lifetime. Both XTOF and TOF experiments showed a trap-limited response for electron transport in Se +Cl and Se:Te + Cl systems. The addition of As was found to restore the electron response in these photoreceptors. The drift mobility in all Se-based systems was found to be field dependent, satisfying the algebraic relation p a Y " where n is a constant varying from 0.03 (for electronic mobility in a-Se) to 0.47 (for electron response in a-Se + 17 wt% Tel. Xerographic discharge measurements showed that alloying a-Se with Te increases the dark decay, due to a bulk thermal generation process. Analysing of dark-decay curves indicates that the volume density and energy spread of the mid-gap localised states in a-Se increases with the Te content. The repetition of the xerographic cycle over a number of times leads to the saturation of the residual voltage which was used to calculate the concentration Nt of deep hole traps. The results showed that the addition of Te increases N , from about 1.9 x l O " C ~-~ for a-Se to 7 x l 013 cm-3 for a-Se + 8 wt% Te. From the charge transport data and saturated residual voltage measurements, the hole capture coefficient in a-Se was estimated to be about 1 .O x 1 O-' c& S" .

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Section: S-'supporting

confidence: 76%

Electrical properties of amorphous semiconductor selenium and its alloys: I. Monolayers

Vaezi-Nejad

Juhasz

1987

Semicond. Sci. Technol.

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“…Also, amorphous chalcogenides, based on Se and Te, have been well studied [1][2][3] and compounds of selenium and tellurium have potential applications in semiconductor devices, transistors and detectors [4]. This underlines the importance of the characterization of these amorphous materials through the determination of their optical constants, such as refractive index and extinction coefficient, as well as their optical band gaps In recent decades, optical properties of thin dielectric films have been the subject of intense study and significant efforts have been made to develop the mathematical formulation describing the transmittance and reflectance of different optical systems [5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Compositional dependence of the optical properties of amorphous Se100-xTex thin films

2008

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“…Binary Se-Te system has a remarkable interest because the components are amorphous and the phadiagram is very simple [9][10][11]. Selenium and tellurium compounds have many potential applications in semiconductor devices, transistors and detectors [12].…”

Section: Introductionmentioning

confidence: 99%

Synthesis and characterization of Bi x (Se80Te20)100−x amorphous thin films

Abdel-Rahim

2015

Indian J Phys

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In this study, amorphous Bi x (Se 80 Te 20 ) 100-x glasses with (0 B x B 12) were prepared by the usual melt quench technique. Thin films of these glasses were deposited onto glass substrates by using thermal evaporation method. The amorphous nature of the as-prepared films was confirmed by X-ray diffraction. Structural investigations were performed using X-ray energy-dispersive spectroscopy, X-ray diffraction and high-resolution transmission electron microscopy. The transmission spectra of these films were measured at normal incidence in the wavelength range 400-2500 nm. Swanepoel's analysis of the maxima and minima of the interference fringes was used to determine the film thickness, the complex index of refraction and the extinction coefficient with high accuracy. The dispersion of the refractive index was well discussed in terms of the single oscillator model (Wemple and DiDomenico). It was found that increasing Bi content led to the increase in refractive index and the extinction coefficient of the Bi x (Se 80 Te 20 ) 100-x films, while the optical band gap decreased. The mechanism of the optical absorption in Bi x (Se 80 Te 20 ) 100-x films obeyed the allowed indirect optical transition. The decrease in optical gap with increasing Bi content was discussed in terms of the chemical bond approach.

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Drift mobility in a-Se1-xTex/Se double-layer xerographic photoreceptors

Cited by 21 publications

References 7 publications

Electrical properties of amorphous semiconductor selenium and its alloys: I. Monolayers

Electrical properties of amorphous semiconductor selenium and its alloys: I. Monolayers

Compositional dependence of the optical properties of amorphous Se100-xTex thin films

Synthesis and characterization of Bi x (Se80Te20)100−x amorphous thin films

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