Drift of Electrons and Atoms in the Laser Radiation Field and Its Influence on the Optical Properties of Semiconductors

Abstract

We experimentally study the influence of the laser-induced drift (LID) of dopant electrons and atoms on the optical properties of semiconductors. It is shown that the LID of electrons results in a dramatic change in the refractive index in the region of laser-radiation output from semiconductor crystals, impairement of the total internal reflection in semiconductors, and the occurrence of astigmatism during self-defocusing of the laser radiation in anisotropic semiconductors. This effect influences the breaking of semiconductors by nanosecond and picosecond laser pulses. The LID of dopant atoms, caused by the electrostatic interaction between the ions of these atoms and the space charge of drifting electrons, changes differently the luminescence spectra on the input and output surfaces of crystals and also results in the appearance of a dark spot on the output surface of some ZnSe crystals after irradiation by a continuous-wave CO 2 laser.

Impact of Laser Irradiation on the Magneto-Optical Properties of Hybrid Multilayer Film Structures

“…The laser-induced drift of electrons changes the threshold damage of the output surface of the semiconducting crystals. 3 Such a drift of electrons in the radiation field must also be observed in metals. This effect is usually weak in massive metals because of their high electron concentration and large absorption factor.…”

“…However, for hybrid multilayer film nanostructures, such a laser impact can cause essential changes in their magneto-optical properties. 3 In the presented paper, we have studied the interaction of the laser radiation with hybrid multilayer films containing thin magnetic and nonmagnetic layers. It is shown that the laser-induced drift of spin-polarized conducting electrons from the ferromagnetic layer results in nonequilibrium magnetization in the nonmagnetic layer.…”