2024
DOI: 10.1021/acsnano.3c11019
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Drift of Schottky Barrier Height in Phase Change Materials

Rivka-Galya Nir-Harwood,
Guy Cohen,
Amlan Majumdar
et al.

Abstract: Phase-change memory (PCM) devices have great potential as multilevel memory cells and artificial synapses for neuromorphic computing hardware. However, their practical use is hampered by resistance drift, a phenomenon commonly attributed to structural relaxation or electronic mechanisms primarily in the context of bulk effects. In this study, we reevaluate the electrical manifestation of resistance drift in sub-100 nm Ge2Sb2Te5 (GST) PCM devices, focusing on the contributions of bulk vs interface effects. We e… Show more

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