Drift velocity and the rate of carrier scattering energy in Sb-containing heterostructure lasers

Dommelen, P. van

doi:10.1016/j.spmi.2016.08.021

Cited by 3 publications

(2 citation statements)

References 20 publications

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“…On the other hand, the characteristics of HEMTs is not only determinded by conductance of the transistor channel in a weak electric field, but also depends on its variation with increasing field strength. Therefore, the field dependence of the electron drift velocity is very important to device analysis and design [5][6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Velocity-field characteristics of MgxZn1−xO/ZnO heterostructures

Liu

2023

J Comput Electron

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In this work, the electron transport in MgxZn1-xO/ZnO heterostructures at room temperature is simulated by the ensemble Monte Carlo (EMC) method. Electron scatterings including deformed acoustic phonon (DAC), piezoelectric acoustic phonon (PAP), polar optical phonon (POP), interface roughness (IFR), dislocation (DIS), electron escape (ESC) and capture (CPR) by optical phonon, and random alloy (RAS), are considered in EMC.Electron drift velocities in MgxZn1-xO/ZnO heterostructures with various Mg composition x (0.1~0.3) are calculated at electric fields up to 25kV/cm. We find that there is no obvious velocity saturation occuring in the range of the electric field considered. The results show that ESC scattering is one of the main physical mechanisms that limit the drift velocity. On the other hand, it is found that the competition between IFR and intersubband POP scatterings plays an important role in the change of electron drift velocity with the increasing Mg compositions.

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Section: Introductionmentioning

confidence: 99%

Velocity-field characteristics of MgxZn1−xO/ZnO heterostructures

Liu

2023

J Comput Electron

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“…Several experimental and theoretical studies of hot charge carrier phenomena in TCQW structures have reported improved physical properties that enhanced performances. For instance, hot charge carrier phenomena were studied under high laser pumping intensity and electric field application to the lattice [4][5][6][7][8][9]. These reports of mid-IR and near-IR QW lasers used photoluminescence (PL) spectra to show that hot charge carrier phenomena can improve properties such as interband threshold energy.…”

Section: Introductionmentioning

confidence: 99%

PL Spectra and Hot Charge Carrier Phenomena in an Undoped GaAs/AlGaAs Tunnel-Coupled Quantum Well

Jarusirirangsi

Dommelen

Daengngam

2021

Journal of Nanomaterials

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In this research, we experimentally investigated the photoluminescence (PL) spectra of an undoped GaAs/Al0.36Ga0.64As Tunnel-Coupled Quantum Well (TCQW) at 300 K and 77 K. At 300 K, PL spectra were broadened at various laser intensities due to the characteristic quantum-confinement electron levels in the active region of the TCQW during pumping excitation. At 77 K, at selected excitation intensities, the high-energy tails in the PL spectra of the studied structure corresponded with hot electron temperatures as functions of the energy of emitted photons. The average scattering energy rate of hot electrons in the system was also studied at a lattice temperature of 77 K. The average scattering energy rate of hot electrons obtained from this experimental study was in agreement with the calculated theoretical value.

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velocity-field characteristics of MgxZn1-xO/ZnO heterostructures

Liu

2022

Preprint

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In this work, the electron transport in MgxZn1−xO/ZnO heterostructures at room temperature is simulated by the ensemble Monte Carlo (EMC) method. Electron scatterings including deformed acoustic phonon (DAC), piezoelectric acoustic phonon (PAP), polar optical phonon (POP), interface roughness (IFR), dislocation (DIS), electron escape (ESC) and capture (CPR) by optical phonon, and random alloy (RAS), are considered in EMC. Electron drift velocities in MgxZn1−xO/ZnO heterostructures with various Mg composition x (0.1 ~ 0.3) are calculated at electric fields up to 25kV/cm. We find that there is no obvious velocity saturation occuring in the range of the electric field considered. The results show that ESC scattering is one of the main physical mechanisms that limit the drift velocity. On the other hand, it is found that the competition between IFR and intersubband POP scatterings plays an important role in the change of electron drift velocity with the increasing Mg compositions.

show abstract

Drift velocity and the rate of carrier scattering energy in Sb-containing heterostructure lasers

Cited by 3 publications

References 20 publications

Velocity-field characteristics of MgxZn1−xO/ZnO heterostructures

Velocity-field characteristics of MgxZn1−xO/ZnO heterostructures

PL Spectra and Hot Charge Carrier Phenomena in an Undoped GaAs/AlGaAs Tunnel-Coupled Quantum Well

velocity-field characteristics of MgxZn1-xO/ZnO heterostructures

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