Drift-Velocity Saturation of Holes in Si Inversion Layers

Sato, Taichiro; Takeishi, Y.; Tango, H.; Ohnuma, Hiroie; Okamoto, Yoshio

doi:10.1143/jpsj.31.1846

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Cited by 38 publications

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Hot-electron magnetoresistance in n-silicon inversion layers)

Hess

1975

Phys. Stat. Sol. (a)

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The magnetoresistance of n‐silicon inversion layers is measurd in dependence on the drain voltage at fixed temperatures and vs. tempeature at low drain voltages. A one‐to‐one correspondence of the electric drain fields and temperatures can be deduced from these measurements. The experimental data are taken at temperatures below 30 K. Assuming that the electrons lose energy to acoustic phonos only, the experimental results are compared with a “two‐dimensional hot‐electron” theory. The coupling constant ZA to the acoustic phonons via the deformation potential is found to be ZA = 5.9 eV, which compares favourably with earlier results.

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Hot-electron magnetoresistance in n-silicon inversion layers)

Hess

1975

Phys. Stat. Sol. (a)

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A Semi-Classical Model for Simulating Inversion Carrier Transport in Si MOS Devices

Chen¹,

Zimmermann²,

Charef³

et al. 1984

Phys. Stat. Sol. (a)

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A semiclassical Monte Carlo model is given for simulating electron transport in Si‐MOS inversion layers. The main feature of the model is that it takes into account the existence of a nonstoichiometric SiOx layer between bulk Si and the SiO2 matrix. The band‐gap in this layer is supposed to evolve linearly perpendicular to the interface from that of Si to that of SiO2. However, the band structure and electron dynamics in the SiOx layer are supposed to be dominantly that of Si. Results for drift velocity in the hot carrier regime are compared with the most recent experimental data. The spatial evolution of the carrier concentration near the interface is also investigated. It is found that the carriers may penetrate into the SiOx layer.

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Material Properties and Transport Physics

Baliga

2008

Fundamentals of Power Semiconductor Devices

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Drift-Velocity Saturation of Holes in Si Inversion Layers

Cited by 38 publications

References 3 publications

Hot-electron magnetoresistance in n-silicon inversion layers)

Hot-electron magnetoresistance in n-silicon inversion layers)

A Semi-Classical Model for Simulating Inversion Carrier Transport in Si MOS Devices

Material Properties and Transport Physics

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