Drive current boosting of n-type tunnel FET with strained SiGe layer at source

Heterogate junctionless tunnel field-effect transistor: future of low-power devices

“…Minor changes in device parameters such as the bandgap (E g ), oxide gate material, etc. can improve the ON-current (I ON ) [29][30][31], as discussed in Sect. 2, and the TFET characteristics are even more sensitive to the oxide thickness (t ox ), doping profile, and dielectric constant of the gate material (k).…”

“…7c. A lower gate work function (Φ m ) results in more band bending in the channel near the source-channel junction [29][30][31], which helps to improve the I ON characteristics of the device, as shown in Fig. 7.…”

Performance investigation of InAs based dual electrode tunnel FET on the analog/RF platform

“…The high ON state current is a prime requirement for high performance devices but TFET is deprived in this prospective. There are many techniques available nowadays to overcome the challenge such as using high-k gate dielectric [6], strain silicon technique [7], dual material gate [8,9], hetero-gate dielectric [10], or using low band gap materials such as InAs [11,12]. To create uniform doping and form abrupt junction are another challenges associated with TFET, which is faced by fabrication engineer [13,14].…”

Device and Circuit Level Performance Comparison of Tunnel FET Architectures and Impact of Heterogeneous Gate Dielectric

“…60mV/dec, a low leakage current, suppressed Short Channel Effects (SCE) [1,2] and CMOS compatible process flow [3]. Numerous device designs and optimization techniques (both experimental and simulation based) such as strain engineering, heterojunction architectures, usage of low bandgap materials, tunnel source MOSFET [4][5][6][7][8][9], have been proposed in recent years in order to improve upon the shortcomings of TFET (a low ON current being the major bottleneck). With recent work reported on the enhanced ON current, TFET has emerged out as an attractive contender for future low power supply technology nodes.…”