Driving DSA into volume manufacturing

Somervell, Mark; Yamauchi, Takashi; Okada, Soichiro; Tomita, Tadatoshi; Nishi, Takanori; Kawakami, Shinichiro; Muramatsu, Makoto; Iijima, Etsuo; Rastogi, Vinayak; Nakano, T.; Iwao, Fumiko; Nagahara, Seiji; Iwaki, Hiroyuki; Dojun, Makiko; Yatsuda, Koichi; Tobana, Toshikatsu; Negreira, Ainhoa Romo; Parnell, Doni; Rathsack, Benjamen M.; Nafus, Kathleen; Peyre, J.-L.; Kitano, Takahiro

doi:10.1117/12.2085776

Cited by 8 publications

(4 citation statements)

References 16 publications

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“…and guided by self-consistent mean-field theory and computer simulation, offer hope that this technology may impact industry and society in the coming years. 157 Expansion of these methods to 3-dimensional structures seems feasible. Imagine combining holographic patterns at the micrometer scale through illumination with light, which locally disorders or reorders regions of a bulk block polymer, 160 in combination with dynamically imposed shear or magnetic fields that result in domain alignment.…”

Section: Macromoleculesmentioning

confidence: 99%

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50th Anniversary Perspective: Block Polymers—Pure Potential

Bates¹,

2016

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Block polymers have undergone extraordinary evolution since their inception more than 60 years ago, maturing from simple surfactants to an expansive class of macromolecules encoded with exquisite attributes. Contemporary synthetic accessibility coupled with facile characterization and rigorous theoretical advances have conspired to continuously generate fundamental insights and enabling concepts that target applications spanning chemistry, biology, physics, and engineering. Here, we parse the vast literature to examine the forefront of the field and identify exciting themes and challenging opportunities that portend a bracing future trajectory. This Perspective celebrates the visionary role played by Macromolecules in advancing our understanding of this remarkable class of materials.

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Section: Macromoleculesmentioning

confidence: 99%

“…Yet, modern block polymer design, synthesis, and processing strategies, qualified by advanced morphological characterization tools (e.g., AFM, tomographic TEM, GISAXS, metrology, etc.) and guided by self-consistent mean-field theory and computer simulation, offer hope that this technology may impact industry and society in the coming years …”

Section: Processingmentioning

confidence: 99%

50th Anniversary Perspective: Block Polymers—Pure Potential

Bates¹,

2016

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“…It is in this scenario where DSA is considered as an attractive alternative for the fabrication of nanoscale structures, thanks to its high resolution, low cost, ease of integration and scalability [ 12 , 13 , 14 ]. Being an affordable high-resolution method with the possibility of scaling up, it has drawn a lot of attention in industrial semiconductor processing since the late 1990s [ 15 , 16 , 17 ], long before the commercial availability of EUV [ 18 , 19 , 20 ].…”

Section: Introductionmentioning

confidence: 99%

Directed Self-Assembly of Block Copolymers for the Fabrication of Functional Devices

et al. 2020

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Directed self-assembly of block copolymers is a bottom-up approach to nanofabrication that has attracted high interest in recent years due to its inherent simplicity, high throughput, low cost and potential for sub-10 nm resolution. In this paper, we review the main principles of directed self-assembly of block copolymers and give a brief overview of some of the most extended applications. We present a novel fabrication route based on the introduction of directed self-assembly of block copolymers as a patterning option for the fabrication of nanoelectromechanical systems. As a proof of concept, we demonstrate the fabrication of suspended silicon membranes clamped by dense arrays of single-crystal silicon nanowires of sub-10 nm diameter. Resulting devices can be further developed for building up high-sensitive mass sensors based on nanomechanical resonators.

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“…

Directed Self-Assembly (DSA) has been reported many times in the past decade as a technique for forming fine patterns [1][2][3][4][5][6][7][8][9][10][11][12] . As processes for application to the semiconductor process, the grapho-epitaxy process forms a desired pattern in an isolated area using a physical guide, and the chemical-epitaxy process forms a single pitch over a wide range using a chemical guide are typical.

…”

mentioning

confidence: 99%

Pattern fidelity improvement of DSA hole patterns

Muramatsu¹,

Nishi²,

Ito³

et al. 2023

Novel Patterning Technologies 2023

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Directed Self-Assembly (DSA) has been reported many times in the past decade as a technique for forming fine patterns1- 12. As processes for application to the semiconductor process, the grapho-epitaxy process forms a desired pattern in an isolated area using a physical guide, and the chemical-epitaxy process forms a single pitch over a wide range using a chemical guide are typical. There are many reports regarding the line pattern formation using a lamellar phase to meet the demand for miniaturization from the mass production of semiconductors, and this is partly because the lamellar phase is relatively stable. However, for fine line pattern formation, multiplication techniques such as SADP (self-aligned double patterning) and SAQP (self-aligned quadruple patterning) have matured, and in recent years, the number of cases where EUV (extreme ultra-violet) single exposure is used is increasing. For this reason, DSA is rarely used in mass production of semiconductors. On the other hand, when miniaturizing high-density hole patterns, methods such as multiple exposure and etching, and methods of forming holes by crossing line patterns formed by SADP are relatively expensive. In addition, it is difficult to maintain the uniformity of hole CD (critical dimension) and pitch. In addition, when EUV is applied, it is not easy to suppress defects and form a wide range of patterns due to stochasticity, which has become a problem in recent years. Therefore, the formation of high-density hole patterns using DSA is attracting attention. In DSA, the hole diameter can be controlled by the molecular weight of BCP (block co-polymer), and the pitch tends to be uniform spontaneously. Also, if the chemical-epitaxy process is used, the pattern can be formed over a wide range. However, hole patterns using a cylinder phase tend to have large fluctuations in hole diameter and placement due to the high degree of freedom in placement. It is also important to what extent the established process can be extended to further miniaturization. In this presentation, we report on the hole pattern formation method by the chemo-epitaxy method and efforts to improve the fidelity for application to the semiconductor process.

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Driving DSA into volume manufacturing

Cited by 8 publications

References 16 publications

50th Anniversary Perspective: Block Polymers—Pure Potential

50th Anniversary Perspective: Block Polymers—Pure Potential

Directed Self-Assembly of Block Copolymers for the Fabrication of Functional Devices

Pattern fidelity improvement of DSA hole patterns

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