Droplet epitaxial growth of highly symmetric quantum dots emitting at telecommunication wavelengths on InP(111)A

Ha, Neul; Liu, Xiangming; Mano, Takaaki; Kuroda, Takashi; Mitsuishi, Kazutaka; Castellano, A.; Sanguinetti, S.; Noda, Takeshi; Sakuma, Yoshiki; Sakoda, Kazuaki

doi:10.1063/1.4870839

Cited by 27 publications

(58 citation statements)

References 29 publications

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“…Furthermore, symmetric QDs with ideal electronic characteristics for entangled photon emitters have been demonstrated using the InAlAs/InP(111)A buffers achieved in our experiments. 10,21 GaAs(110) quantum wells have been used to make encouraging spintronic devices, [33][34][35][36] and the developments we report here may soon help enable InP(110)-based spintronics. Smooth buffer layers on InP (111) surfaces are anticipated to provide ideal templates for the growth of topological insulators and transition metal dichalcogenides.…”

Section: Discussionmentioning

confidence: 99%

“…27 This principle has enabled us to demonstrate high-quality tensile GaAs/InAlAs and GaP/GaAs nanostructures on both (110) and (111) surfaces. 9,21,[28][29][30] Since tensile strain can strongly reduce semiconductor bandgaps, 9,30 tensile QDs on these surfaces are promising for optoelectronic devices operating at long wavelengths. Moreover, tensile GaAs/InAlAs QDs grown on (111) surfaces are perfectly suited to entangled photon generation due to their high electronic symmetry.…”

Section: Tensile Quantum Dotsmentioning

confidence: 99%

“…15,16 Growth of (111) QDs is a significant challenge, which has been addressed using etch-pit-assisted growth, 11,17 droplet epitaxy, [18][19][20][21] and recently tensile-strained self-assembly (described below). 10 All of these (111) QD growth methods result in very low FSS compared to (001) QDs.…”

Section: Entangled Photon Sourcesmentioning

confidence: 99%

See 2 more Smart Citations

Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)

Yerino

Liang

Huffaker

et al. 2016

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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For more than 50 years, research into III-V compound semiconductors has focused almost exclusively on materials grown on (001)-oriented substrates. In part, this is due to the relative ease with which III-Vs can be grown on (001) surfaces. However, in recent years, a number of key technologies have emerged that could be realized, or vastly improved, by the ability to also grow high-quality III-Vs on (111)-or (110)-oriented substrates These applications include: nextgeneration field-effect transistors, novel quantum dots, entangled photon emitters, spintronics, topological insulators, and transition metal dichalcogenides. The first purpose of this paper is to present a comprehensive review of the literature concerning growth by molecular beam epitaxy (MBE) of III-Vs on (111) and (110) substrates. The second is to describe our recent experimental findings on the growth, morphology, electrical, and optical properties of layers grown on non-(001) InP wafers. Taking InP(111)A, InP(111)B, and InP(110) substrates in turn, the authors systematically discuss growth of both In 0.52 Al 0.48 As and In 0.53 Ga 0.47 As on these surfaces. For each material system, the authors identify the main challenges for growth, and the key growth parameter-property relationships, trends, and interdependencies. The authors conclude with a section summarizing the MBE conditions needed to optimize the structural, optical and electrical properties of GaAs, InAlAs and InGaAs grown with (111) and (110) orientations. In most cases, the MBE growth parameters the authors recommend will enable the reader to grow high-quality material on these increasingly important non-(001) surfaces, paving the way for exciting technological advances.

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Section: Discussionmentioning

confidence: 99%

Section: Tensile Quantum Dotsmentioning

confidence: 99%

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Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)

Yerino

Liang

Huffaker

et al. 2016

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…Production of quantum dots with naturally small FSS may be achieved in special cases, by self-assembled growth of InAs quantum dots around 885 nm, where an inversion of the wave-function symmetry is observed [7], or growth on (111) surfaces [8][9][10], aided by the underlying C 3v crystal symmetry which very often results in dot density preventing the spectral isolation of individual lines [11][12][13]. Another approach is the growth of strain-free GaAs=ðAl; GaÞAs QDs in locally etched pits [14].…”

Section: Introductionmentioning

confidence: 99%

Universal Growth Scheme for Quantum Dots with Low Fine-Structure Splitting at Various Emission Wavelengths

et al. 2017

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Efficient sources of individual pairs of entangled photons are required for quantum networks to operate using fiber-optic infrastructure. Entangled light can be generated by quantum dots (QDs) with naturally small fine-structure splitting (FSS) between exciton eigenstates. Moreover, QDs can be engineered to emit at standard telecom wavelengths. To achieve sufficient signal intensity for applications, QDs have been incorporated into one-dimensional optical microcavities. However, combining these properties in a single device has so far proved elusive. Here, we introduce a growth strategy to realize QDs with small FSS in the conventional telecom band, and within an optical cavity. Our approach employs ''droplet-epitaxy'' of InAs quantum dots on (001) substrates. We show the scheme improves the symmetry of the dots by 72%. Furthermore, our technique is universal, and produces low FSS QDs by molecular beam epitaxy on GaAs emitting at ∼900 nm, and metal-organic vapor-phase epitaxy on InP emitting at ∼1550 nm, with mean FSS 4× smaller than for Stranski-Krastanow QDs.

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“…Though most previous works on droplet epitaxy dealt with lattice-matched systems, the versatility of this technique makes it possible to create QDs on lattice-mismatched systems targeting telecom-band emission. The successful growth of InAs/InAlAs QDs on InP(111)A has recently been demonstrated 27 . Here we use newly created QDs with a lower surface density, which allows a systematic study of FSS and the symmetry characteristics of dots.…”

mentioning

confidence: 99%

Vanishing fine-structure splittings in telecommunication-wavelength quantum dots grown on (111)A surfaces by droplet epitaxy

Liu

Nakajima³

et al. 2014

Phys. Rev. B

Self Cite

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The emission cascade of a single quantum dot is a promising source of entangled photons. A prerequisite for this source is the use of a symmetric dot analogous to an atom in a vacuum, but the simultaneous achievement of structural symmetry and emission in a telecom band poses a challenge. Here we report the growth and characterization of highly symmetric InAs/InAlAs quantum dots self-assembled on C3v symmetric InP(111)A. The broad emission spectra cover the O (λ ∼ 1.3 µm), C (λ ∼ 1.55 µmm), and L (λ ∼ 1.6 µm) telecom bands. The distribution of the fine-structure splittings is considerably smaller than those reported in previous works on dots at similar wavelengths. The presence of dots with degenerate exciton lines is further confirmed by the optical orientation technique. Thus, our dot systems are expected to serve as efficient entangled photon emitters for long-distance fiber-based quantum key distribution.Semiconductor quantum dots (QD) are expected to play a central role in quantum information networks. A noteworthy device based on dots is the solid-state single photon source, which ensures absolute security in quantum key distribution (QKD)1 . Since QDs can confine charged carriers in nanometer-sized regions, recombination enables single photons to appear on demand, i.e., synchronously with a master clock shared in networks 2 . QKD over a 50 km commercial fiber has already been demonstrated with QD photon sources, which emitted at a wavelength of 1.5 µm 3 . The transmission distance in that work was limited purely by the absorption loss of silicate fibers. Exceeding this fundamental limit requires the development of quantum link protocols, which exploit the nonlocality inherent in quantum theory. An efficient source of entangled photon pairs is a key element in the realization of such protocols, examples of which include quantum teleportation 4 and entanglement swapping 5 . The generation of entangled photons with semiconductor QDs is directly linked to the singlet configuration of two excitons (X), which form a biexciton (XX). Eventually, two photons associated with the XX-X cascade show polarization correlations independent of the choice of measurement basis, yielding quantum entanglement in the polarization state. However, a common class of QDs exhibits considerable fine-structure splittings (FSS) 6-10 , which exclude entanglement in emitted photons 11 . Numerous attempts have been made to suppress FSS and recover the symmetry of QDs grown on conventional (001) oriented substrates [12][13][14][15][16][17][18][19] . However, from a practical point of view, the reproducible growth of symmetric dots with (at least) near-zero FSS is highly desirable.A noteworthy strategy for achieving such high QD symmetry is the application of C 3v symmetric (111) makes it possible to grow QDs on (111) substrates. Hence, a great reduction in FSS was observed in these QDs 23,24 , which led to the demonstration of entangled photon emission in pyramidal QDs on patterned (111)B substrates 25 , and the filtering-free violation ...

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Droplet epitaxial growth of highly symmetric quantum dots emitting at telecommunication wavelengths on InP(111)A

Cited by 27 publications

References 29 publications

Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)

Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)

Universal Growth Scheme for Quantum Dots with Low Fine-Structure Splitting at Various Emission Wavelengths

Vanishing fine-structure splittings in telecommunication-wavelength quantum dots grown on (111)A surfaces by droplet epitaxy

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