DRV Evaluation of 6T SRAM Cell Using Efficient Optimization Techniques

Abstract

An optimization based method which uses bisection search algorithm has been proposed to evaluate the accurate value of Data Retention Voltage (DRV) of a 6T Static Random Access Memory (SRAM) cell using 45 nm technology in the presence of process parameter variations. Further, we incorporate an Artificial Neural Network (ANN) block in our proposed methodology to optimize the simulation run time. The highest values obtained from these two methods are declared as the DRV. We noted an increase in DRV with temperature (T) and process variations (PVs). The main advantage of the proposed technique is to reduce the DRV evaluation time and for our case, we observe improvement in evaluation time of DRV by ≈46, ≈27, and ≈8 times at 25°C for 3 σ, 4 σ, and 5 σ variations, respectively, using ANN block to without using ANN block.

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“…)] × 𝑉 𝐷𝑅 P leak = I leak × 𝑉 𝐷𝑅 (12) One of the direct methods to determine V DR as the minimum standby voltage for memory array structures is to perform simulations using the desired parameter despite of high time-consuming to find the accurate value of V DR distribution Monte-Carlo (MC) based on a large number of samples until a desired failure probability level. Since obtaining the exact failure point of a rare event using MC simulation can be very time-consuming [27], so in this section a method for facile estimation of the V DR parameter is suggested. Figure 11 chart of suggested algorithm for shows the evaluation and estimation of V DR using thermal voltage (KT=26 mVolt).…”

“…The V DR or the critical V dd , represents the minimum operating supply voltage at which a bit-cell can still preserve its bit-data, introduced as an evaluation criterion of SRAM bit-cell in low voltage designs [26][27][28] to be able to move the designs near or sub-V DR to reduce power consumption. The effectiveness of temperature variations on SRAM stability in terms of V DR process in the presence of other TT, SS, SF, FS, FF corner conditions using the proposed algorithm in Fig.…”