Dry etching and induced damage

Drift, E. van der; Cheung, Rebecca; Zijlstra, T.

doi:10.1016/0167-9317(95)00175-1

Cited by 14 publications

(8 citation statements)

References 64 publications

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“…Process-induced damage is of great concern in reliability assurance and yield improvement of modern submicron semiconductor devices manufacturing by ultralarge-scale integration technology. [15][16][17] Considering the 1 Gbit DRAM integration, each memory cell requires a minimum of 20 fF of capacitance. However, these capacitors would suffer damage from an integration process such as etching or back-end processes.…”

Section: Introductionmentioning

confidence: 99%

Etching characteristics and plasma-induced damage of high-k Ba0.5Sr0.5TiO3 thin-film capacitors

Wuu¹,

Lin²,

Horng³

et al. 2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The inductively coupled plasma (ICP) etching behavior of Ba0.5Sr0.5TiO3 (BST) thin films has been characterized with Cl2/Ar gas mixtures by varying the process parameters such as chamber pressure, ICP power, and substrate bias rf power. The etching characteristics of BST were investigated in terms of etch rate, etch profile, surface residue, and electrical properties. The results obtained can be further interpreted by the plasma properties (ion flux and dc bias) in situ measured by a Langmuir probe. Quantitative analysis of the plasma-induced damage in the Pt/BST/Pt capacitor was attempted to discuss the mechanism of leakage current density and dielectric constant with various substrate bias rf power and ICP power levels. Finally, optimization of the etch parameters for fabricating BST capacitors was performed to minimize the plasma-induced damage. The optimum condition appears to be under a 30% Cl2/(Cl2+Ar) gas mixture, ICP power of 800 W, substrate bias rf power of 100 W, and chamber pressure of 0.67 Pa. Furthermore, it is found that the damage samples can be effectively recovered after annealing at 600 °C in oxygen ambient. The result can be confirmed by the x-ray diffraction data, which indicates that an improvement of BST crystalline quality after annealing occurs. This makes the leakage current density of the Pt/BST/Pt capacitor decrease to 3×10−7 A/cm2 under an applied voltage of 1.5 V, while its dielectric constant can recover from 150 to 180.

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Section: Introductionmentioning

confidence: 99%

Etching characteristics and plasma-induced damage of high-k Ba0.5Sr0.5TiO3 thin-film capacitors

Wuu¹,

Lin²,

Horng³

et al. 2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…It is known that surface damage and contamination induced during dry etch patterning of semiconductors can significantly affect the properties of the material, subsequent processing, and device performance. 5,6 Therefore, in order to obtain better understanding, prediction, and even control of the properties and behavior of the fabricated devices, it is essential to characterize and investigate the surface microstructure modifications caused by dry etch processes. Although surface morphology of etched SiC has been studied, [7][8][9] there is lack of investigation on the etch products on the surface of the etched SiC, especially the variation of these etch products under different etch conditions.…”

Section: Introductionmentioning

confidence: 99%

Inductively coupled plasma etching of SiC in SF6/O2 and etch-induced surface chemical bonding modifications

Jiang

Cheung

Brown

et al. 2003

Journal of Applied Physics

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4H silicon carbide ͑SiC͒ substrates were dry etched in an inductively coupled plasma ͑ICP͒ system, using SF 6 /O 2 gas mixtures. Etch rate and etch mechanisms have been investigated as a function of oxygen concentration in the gas mixture, ICP chuck power, work pressure, and flow rate. Corresponding to these etch conditions, surface information of the etched SiC has been obtained by x-ray photoelectron spectroscopy measurements. The fact that no obvious Si-Si and Si-F bonds were detected on the etched surface of SiC in all our etch experiments suggests efficient removal of Si atoms as volatile products during the processes. However, various kinds of C-F bonds have been detected on the etched SiC surface and the relative intensities of these bonds vary with the etch conditions. In addition, the nature of the incorporated F atoms on the etched surface also depends strongly on etch conditions, which was identified by the change of the relative ratio between semi-ionic and covalent carbon fluorine bonds. The electrical behavior for different bond structures on the etched SiC surface can be one of the basic reasons affecting related devices.

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“…Unfortunately, the large Si-C bond energy makes SiC etching very difficult, therefore the powerful plasma-based dry etching becomes the main practical way to etch SiC in the fabrication of MEMS [7] . However, the surface residues resulting from dry etching can significantly affect the properties of materials, subsequent processing and device performance [8,9] . Therefore, it is very important to develop a new method to etch SiC with high etching rate, small surface roughness and little surface residue [7] .…”

Section: Introductionmentioning

confidence: 99%

Effect of Low-Frequency Power on Etching Characteristics of 6H-SiC in C₄F₈/Ar Dual-Frequency Capacitively Coupled Plasma

Xu¹,

Xuemei²,

Ye³

2013

Plasma Sci. Technol.

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Dry etching of 6H silicon carbide (6H-SiC) wafers in a C4F8/Ar dual-frequency capacitively coupled plasma (DF-CCP) was investigated. Atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS) were used to measure the SiC surface structure and compositions, respectively. Optical emission spectroscopy (OES) was used to measure the relative concentration of F radicals in the plasma. It was found that the roughness of the etched SiC surface and the etching rate are directly related to the power of low-frequency (LF) source. At lower LF power, a smaller surface roughness and a lower etching rate are obtained due to weak bombardment of low energy ions on the SiC wafers. At higher LF power the etching rate can be efficiently increased, but the surface roughness increases too. Compared with other plasma dry etching methods, the DF-CCP can effectively inhibit CxFy films' deposition, and reduce surface residues.

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Dry etching and induced damage

Cited by 14 publications

References 64 publications

Etching characteristics and plasma-induced damage of high-k Ba0.5Sr0.5TiO3 thin-film capacitors

Etching characteristics and plasma-induced damage of high-k Ba0.5Sr0.5TiO3 thin-film capacitors

Inductively coupled plasma etching of SiC in SF6/O2 and etch-induced surface chemical bonding modifications

Effect of Low-Frequency Power on Etching Characteristics of 6H-SiC in C₄F₈/Ar Dual-Frequency Capacitively Coupled Plasma

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Dry etching and induced damage

Cited by 14 publications

References 64 publications

Etching characteristics and plasma-induced damage of high-k Ba0.5Sr0.5TiO3 thin-film capacitors

Etching characteristics and plasma-induced damage of high-k Ba0.5Sr0.5TiO3 thin-film capacitors

Inductively coupled plasma etching of SiC in SF6/O2 and etch-induced surface chemical bonding modifications

Effect of Low-Frequency Power on Etching Characteristics of 6H-SiC in C4F8/Ar Dual-Frequency Capacitively Coupled Plasma

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Effect of Low-Frequency Power on Etching Characteristics of 6H-SiC in C₄F₈/Ar Dual-Frequency Capacitively Coupled Plasma