Dry Etching for VLSI

Roosmalen, A. J. van; Baggerman, J. A. G.; Brader, S. J. H.

doi:10.1007/978-1-4899-2566-4

Cited by 115 publications

(88 citation statements)

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“…The input power density W' = W/πr 2 l then became 0.9 W/cm 3 . In order to imitate actual etching conditions, the bottom electrode was biased by W dc = 200 W. The CF 4 /O 2 /Ar gas compositions were set by adjusting the partial flow rates.…”

Section: Experimental Setup and Proceduresmentioning

confidence: 96%

“…From Refs. [2][3][4], it can be understood that the FC gases are frequently combined with O 2 with the aim of increasing the F atoms yield and suppressing polymerization on the surfaces which are in a contact with plasma. Really, there are many experimental evidences that the addition of O 2 to the CF 4 -based gas mixture results in the non-monotonic behavior of the F atom density which exhibits a maximum at 20-40% O 2 [5][6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

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PLASMA PARAMETERS AND COMPOSITION IN CF4/O2/Ar GAS MIXTURE

Efremov

Kwon²

2017

IVUZKKT

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For citation:Efremov A.M., Kwon K.-H. Plasma parameters and composition in CF4/O2/Ar gas mixture. Izv. Vyssh. Uchebn. Zaved. Khim. Khim. Tekhnol. 2017. V. 60. N 1. P. 50-55.The effects of O2/Ar mixing ratio in CF4/O2/Ar mixture on both plasma parameters and fluxes of active species determining the dry etching kinetics in this gas system were analyzed. The investigation combined plasma diagnostics by Langmuir probes and zero-dimensional plasma modeling. It was found that the substitution of Ar with O2 at constant fraction of CF4 in a feed gas does not result in the non-monotonic change in F atom density, as it was repeatedly reported for the binary CF4/O2 gas mixtures. The mechanisms of this phenomenon as well as its possible impact on the etching/polymerization kinetics were discussed in details.

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Section: Experimental Setup and Proceduresmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

PLASMA PARAMETERS AND COMPOSITION IN CF4/O2/Ar GAS MIXTURE

Efremov

Kwon²

2017

IVUZKKT

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“…Such silicides still react with fluorine as the standard enthalpies of formation (Δ f H 0 m ) for the two main tungsten silicides (−82 ± 6 kJ mol −1 for WSi 2 and −133 ± 25 for W 5 Si 3 [88,89]) are much higher than for the fluorine compounds. It is also known from previous works, although based on a F-plasma from CF 4 /O 2 , that such silicides actually etch at higher rates than the pure metal, meaning E act will probably be between the tungsten and silicon values [90,91]. However, additional reactions can also occur in such dual-material structures.…”

Section: Comparison Of ML With Silicon Etchingmentioning

confidence: 90%

“…The etch rate depends on the amount of fluorine radicals in the plasma, which is determined by the SF 6 -flow and ICP-power. The scallop-ratio in silicon is generally 0.3 and decreases with trench aspect-ratio [91,92]. However, the scallop formation in ML structures is quite different to that in silicon as can be seen in figure 4.8a.…”

Section: Control Of Scallop Formationmentioning

confidence: 93%

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Single-order lamellar multilayer gratings

Meer¹

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Cover: 3D artist impression of a Lamellar Multilayer Grating (LMG). A Transmission Electron Microscope image of an actual LMG is shown on the rear. The grating was etched into a 400 bi-layer W/Si multilayer mirror with a total stack height H of 1 μm and a tungsten layer thickness of only 3 atoms. The grating had a period D of 300 nm and a lamel width ΓD of 75 nm. In comparison to the TEM image on the rear, the red and green layers in the artist impression correspond to tungsten and silicon, respectively. The bi-layer period in the artist impression is overestimated by a factor of 10 for visibility. SummaryA major challenge in the soft x-ray (SXR) and eXtreme UltraViolet (XUV) spectral ranges is the ability to manipulate the incident radiation using optical elements. By patterning conventional multilayer mirrors with nanoscale structures, novel optical elements with a variety of optical properties can be obtained. In this work, the design, fabrication and characterization of Lamellar Multilayer Gratings (LMG) was investigated. Such LMGs are a particular form of the general class of Bragg-Fresnel optics which combine Fresnel optics with Bragg reflection to provide unique dispersive and focusing optics. In particular, LMGs can be used to improve the spectral resolution of x-ray fluorescence techniques.A Coupled Waves Approach (CWA) was derived to simulate the optical performance, in terms of resolution and reflectivity, of LMGs. This CWA allowed to study the physical principles behind LMGs and resulted in the identification of an optimal LMG operating regime. In this regime, the incident beam is reflected in a single diffraction order and is hence referred to as the singleorder regime. Such single-order LMGs were fabricated using UV-NanoImprint Lithography and Bosch Deep Reactive Ion Etching, a process chosen to enable rapid practical development. Single-order operation was experimentally demonstrated and showed an improvement in spectral resolution of a factor of 3.8 with regard to conventional multilayer mirrors. Singe-order excitation of higher diffraction orders was also measured and analyzed.Single-order operation often requires multilayer stacks and grating structures that cannot be fabricated with sufficient accuracy using current technologies. As this invalidates the semi-infinite multilayer approximation, we investigated the optical performance of LMGs with finite multilayer stacks. We determined the ratio between the absorber thickness and bi-layer period of the multilayer stack can be used to further tailor LMG optical performance to maximize bandwidth reduction or minimize peak reflectivity loss. We also investigated various degradation processes that could limit the lifetime of LMGs, which is important for the applicability of such elements. Oxidation of tungsten and silicon as well as changes to the sidewall composition were clearly seen. However, SXR reflectivity remained stable to within measurement accuracy for an extended storage period of 18 months in a 1 atm air environment. The possibility of ...

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Plasma Chemistry

Pearton¹

1999

Wiley Encyclopedia of Electrical and Electronics Engineering

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The sections in this article are Model System: F 2 ‐Based Etching of SiO 2 Etching of Si Etching of Al and Al alloys Etching of Refractory Metals and Silicides Etching of Photoresist and Polymers Loading and Aspect‐Ratio‐Dependent Etching Damage and Residues Plasma Analytical Techniques Compound Semiconductor Etching

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Dry Etching for VLSI

Cited by 115 publications

References 0 publications

PLASMA PARAMETERS AND COMPOSITION IN CF4/O2/Ar GAS MIXTURE

PLASMA PARAMETERS AND COMPOSITION IN CF4/O2/Ar GAS MIXTURE

Single-order lamellar multilayer gratings

Plasma Chemistry

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