Dry etching of SiC using Ar/F₂plasma and XeF₂plasma

Abstract

We investigated the SiC dry etching process using Ar/F2 plasma and XeF2 plasma. We carried out optical observation of Ar/F2 plasma and XeF2 plasma. The dominant etching species were different between Ar/F2 plasma and XeF2 plasma. The etching rates of SiC were approximately 100 nm/min at 25 sccm and 200 W for Ar/F2 plasma and 45 nm/min at 2.5 sccm and 100 W for XeF2 plasma. Vertical etching profiles and a smooth etched surface were obtained. The average roughness of the etched bottom surface was 1 nm, which satisfied the requirements for optical device fabrication. We believe that the proposed etching process using F2 of zero-global-warming-potential gases is very simple and useful for fabricating optical devices and micro-electromechanical systems (MEMSs).

Evaluation of characteristics in VOx microbolometer fabricated by MOD on Si3N4/SiO2 membrane

“…To solve this problem, in this study, we fabricated the Si 3 N 4 /SiO 2 membrane by introducing a process for etching the Si by Deep-RIE 21 (Reactive Ion Etching) and XeF 2 gas phase etching. 22,23 Therefore, this study is aimed at realizing a highly sensitive antenna-coupled VO x bolometer detection device on a membrane using the MOD method. To achieve this, we will (1) fabricate a VO x thin film on a Si 3 N 4 /SiO 2 /Si substrate by the MOD method and evaluate the characteristics of that thin film, and (2) fabricate a Si 3 N 4 /SiO 2 membrane by Deep-RIE and XeF 2 gas phase etching, and evaluate the characteristics of the VO x bolometer that is fabricated on the membrane.…”

Evaluation of Characteristics in VO_x Microbolometer Fabricated by MOD on Si₃N₄/SiO₂ Membrane

“…20 However, etching takes a long time, the etching rate greatly depends on the temperature and concentration of the solution. 22,23 Therefore, this study is aimed at realizing a highly sensitive antenna-coupled VO x bolometer detection device on a membrane using the MOD method. Consequently, it is difficult to achieve excellent reproducibility in membrane fabrication.…”

“…To solve this problem, in this study, we fabricated the Si 3 N 4 /SiO 2 membrane by introducing a process for etching the Si by Deep-RIE 21 (Reactive Ion Etching) and XeF 2 gas phase etching. 22,23 Therefore, this study is aimed at realizing a highly sensitive antenna-coupled VO x bolometer detection device on a membrane using the MOD method. To achieve this, we will (1) fabricate a VO x thin film on a Si 3 N 4 /SiO 2 /Si substrate by the MOD method and evaluate the characteristics of that thin film, and (2) fabricate a Si 3 N 4 /SiO 2 membrane by Deep-RIE and XeF 2 gas phase etching, and evaluate the characteristics of the VO x bolometer that is fabricated on the membrane.…”