(DS&T Thomas D. Callinan Award Presentation) Role of Hydrogen in Dielectrics for Electronics and Optoelectronics Devices

Abstract

In silicon-based electronic and optoelectronic devices hydrogen plays a significant role in passivating silicon dangling bonds. This improves the device performance and reliability of the devices by producing a high quality Si-SiO 2 interface. This work reviews the early use of hydrogen in standard silicon MOS devices with SiO 2 as gate dielectric to recent devices with high-k gate stacks. Role of hydrogen's isotope deuterium is outlined. In addition, the impact of hydrogen in high-k gate dielectrics on silicon and germanium substrates is also discussed. Contribution of hydrogen/deuterium in photodiode performance is also briefly described.

High k Dielectrics on High-Mobility Substrates: The Interface!

“…According to the perspective on future evolution of CMOS technologies as presented at the International Technology Roadmap for Semiconductors (ITRS) (2010 edition) 6 several critical issues need to be resolved before these channel materials are integrated into the CMOS device/ process technologies. Several recent ECS symposia, "Dielectrics on Nanosystems," 7 "High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics" 8 and "Graphene, Ge/III-V, Nanowires, and Emerging Materials for Post-CMOS Applications," 9 have addressed these issues. First, alternate channel materials cointegrated with high k dielectric are required to implement high mobility n and p channels.…”

“…Some of these interface states may be passivated by simple forming gas anneal or nitridation where others may require specialized passivation methods such as a-slicon, germanium or sulfur. Recent initiatives [7][8][9] in this technology area outline the focus of current research to understand the interface states in high mobility substrates. Here some of the interface properties of high-k and the high-mobility channel materials are reviewed for both Ge and various III-V substrates.…”