DSA materials contributions to the defectivity performance of 14nm half-pitch LiNe flow at IMEC

Pathangi, Hari; Vaid, Varun; Chan, Boon Teik; Vandenbroeck, Nadia; Jin, Li; Hong, Sung Eun; Cao, Yi; Baskaran, Durairaj; Lin, Guanyang; Somervell, Mark; Kitano, Takahiro; Harukawa, Ryota; Sah, Kaushik; Cross, Andrew; Bayana, Hareen; D’Urzo, Lucia; Gronheid, Roel

doi:10.1117/12.2219936

Cited by 6 publications

(5 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…All three images in Figure show DSA after the optimization of prepattern pitch, guide stripe width, brush composition, and BCP film thickness separately for each process (a summary of these conditions appears in Table S.2 in the SI, and discussion of the optimization of the process parameters follows later in the manuscript). Despite the lower defectivity in the hybrid process versus the chemo-epitaxial process, the defectivity for this 20 nm silicon-containing BCP is much higher than imec’s 28 nm PS- b -PMMA process, and determining the contributors of defectivity in this system is an ongoing area of research.…”

Section: Resultsmentioning

confidence: 98%

“…Herein, we describe the creation of a hybrid chemo-/grapho-epitaxial process on HVM equipment at imec, and we compare its ability to guide a 20 nm full pitch ( L 0 ) styrene-based silicon-containing BCP, poly(4-methoxystyrene- b -4-trimethylsilylstyrene) (PMOST- b -PTMSS), with a conventional chemo-epitaxial process. The 20 nm L 0 BCP is approximately 30% smaller than imec’s 28 nm process of record for PS- b -PMMA DSA and approximately 10% smaller than the practical 22 nm limit of PS- b -PMMA, but importantly, 4× and 5× guideline prepatterns for the 20 nm pitch BCP (80 and 100 nm full pitch, respectively) are still within the resolution capabilities of 193i. Successful DSA was achieved with 4× and 5× density multiplication of the initial prepattern pitch for both processes, but the defectivity in the hybrid process was lower.…”

mentioning

confidence: 77%

See 1 more Smart Citation

A Hybrid Chemo-/Grapho-Epitaxial Alignment Strategy for Defect Reduction in Sub-10 nm Directed Self-Assembly of Silicon-Containing Block Copolymers

et al. 2016

Self Cite

View full text Add to dashboard Cite

The directed self-assembly (DSA) of a 20 nm full-pitch silicon-containing block copolymer (BCP), poly(4-methoxystyrene-b-4-trimethylsilylstyrene), was performed using a process that produces shallow topography for hybrid chemo-/grapho-epitaxy. This hybrid process produced DSA with fewer defects than the analogous conventional chemo-epitaxial process, and the resulting DSA was also more tolerant of variations in process parameters. Cross-sectional scanning transmission electron microscopy (STEM) with electron energy loss spectroscopy (EELS) confirmed that BCP features spanned the entire film thickness on hybrid process wafers. Both processes were implemented on 300 mm wafers initially prepatterned by 193 nm immersion lithography, which is necessary for economic viability in high-volume manufacturing. Computational analysis of DSA extracted from top-down SEM images demonstrates the influence of process parameters on DSA, facilitating the optimization of guide stripe width, guide stripe pitch, and prepattern surface energy. This work demonstrates the ability of a hybrid process to improve the DSA quality over a conventional chemo-epitaxial process and the potential for high-volume manufacturing with high-χ, silicon-containing BCPs.

show abstract

Section: Resultsmentioning

confidence: 98%

mentioning

confidence: 77%

A Hybrid Chemo-/Grapho-Epitaxial Alignment Strategy for Defect Reduction in Sub-10 nm Directed Self-Assembly of Silicon-Containing Block Copolymers

et al. 2016

Self Cite

View full text Add to dashboard Cite

show abstract

“…Missing defects are related to critical dimension (CD) and the surface affinity of the guide pattern, while the dislocation defects are associated with insufficient bake process [71]. Pathangi et al [72] presented the 14-nm half-pitch DSA line/space patterning into the Si substrate with reduced defectivity. More recently it has been claimed that a dense (pitch 120 nm) contact area superior to 0.01 mm 2 free of DSA-related defects is achieved [73].…”

Section: Status and Challengesmentioning

confidence: 99%

Promising Lithography Techniques for Next-Generation Logic Devices

2018

View full text Add to dashboard Cite

Continuous rapid shrinking of feature size made the authorities to seek alternative patterning methods as the conventional photolithography comes with its intrinsic resolution limit. In this regard, some promising techniques have been proposed as next-generation lithography (NGL) that has the potentials to achieve both high-volume production and very high resolution. This article reviews the promising NGL techniques and introduces the challenges and a perspective on future directions of the NGL techniques. Extreme ultraviolet lithography (EUVL) is considered as the main candidate for sub-10-nm manufacturing, and it could potentially meet the current requirements of the industry. Remarkable progress in EUVL has been made and the tools will be available for commercial operation soon. Maskless lithography techniques are used for patterning in R&D, mask/mold fabrication and low-volume chip design. Directed self-assembly has already been realized in laboratory and further effort will be needed to make it as NGL solution. Nanoimprint lithography has emerged attractively due to its simple process steps, high throughput, high resolution and low cost and become one of the commercial platforms for nanofabrication. However, a number of challenging issues are waiting ahead, and further technological progresses are required to make the techniques significant and reliable to meet the current demand. Finally, a comparative study is presented among these techniques.

show abstract

“…Researchers are also focusing on recognizing the factors that are responsible for the assembly defects (dislocations and line-period bridges). H. Pathangi, et al presented the 14 nm half-pitch DSA line/space patterning into the Si substrate with reduced defectivity [55]. Moreover, to improve pattern quality, some experiments have been performed on various etch mask materials and etch process conditions [56].…”

Section: Directed Self Assemblymentioning

confidence: 99%

Nanolithography: Status and challenges

Hasan

Luo

2017

2017 23rd International Conference on Automation and Computing (ICAC)

View full text Add to dashboard Cite

Abstract-With the help of immersion lithography and multiple patterning, photolithography has been the key technology over the last decade in manufacturing of ICs, microchips and MEMS devices. Continuous rapid shrinking of feature size made the authorities to seek alternative patterning methods that can go beyond classic photographic limits. Some promising techniques have been proposed as next generation lithography and further technological progress are required to make them significant and reliable to meet the current demand. EUVL is considered as the main candidate for sub-10 nm manufacturing because of its process simplicity and reduced operating cost. Remarkable progress in EUVL has been made and the tools will be available for commercial operation soon. EBL, FIB and Xray lithography are used for patterning in R&D, mask/mold fabrication and low volume chip design. DSA have already been realized in lab and further effort will be needed to make it as NGL solution. NIL has emerged attractively due to its simple process-steps, high-throughput, high-resolution and low cost and become one of the commercial platforms for nanofabrication.

show abstract

DSA materials contributions to the defectivity performance of 14nm half-pitch LiNe flow at IMEC

Cited by 6 publications

References 2 publications

A Hybrid Chemo-/Grapho-Epitaxial Alignment Strategy for Defect Reduction in Sub-10 nm Directed Self-Assembly of Silicon-Containing Block Copolymers

A Hybrid Chemo-/Grapho-Epitaxial Alignment Strategy for Defect Reduction in Sub-10 nm Directed Self-Assembly of Silicon-Containing Block Copolymers

Promising Lithography Techniques for Next-Generation Logic Devices

Nanolithography: Status and challenges

Contact Info

Product

Resources

About